Datasheet

SN65HVD10, SN65HVD10Q, SN75HVD10
SN65HVD11, SN65HVD11Q, SN75HVD11
SN65HVD12, SN75HVD12
SLLS505M –FEBRUARY 2002–REVISED JULY 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PACKAGE
SIGNALING
UNIT LOADS T
A
SOIC MARKING
RATE
SOIC
(1)
PDIP
32 Mbps 1/2 SN65HVD10D SN65HVD10P VP10
10 Mbps 1/8 –40°C to 85°C SN65HVD11D SN65HVD11P VP11
1 Mbps 1/8 SN65HVD12D SN65HVD12P VP12
32 Mbps 1/2 SN75HVD10D SN75HVD10P VN10
10 Mbps 1/8 –0°C to 70°C SN75HVD11D SN75HVD11P VN11
1 Mbps 1/8 SN75HVD12D SN75HVD12P VN12
32 Mbps 1/2 SN65HVD10QD SN65HVD10QP VP10Q
–40°C to 125°C
10 Mbps 1/8 SN65HVD11QD SN65HVD11QP VP11Q
(1) The D package is available taped and reeled. Add an R suffix to the part number (i.e., SN75HVD11DR).
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1) (2)
UNIT
V
CC
Supply voltage range –0.3 V to 6 V
Voltage range at A or B –9 V to 14 V
Input voltage range at D, DE, R or RE –0.5 V to V
CC
+ 0.5 V
Voltage input range, transient pulse, A and B, through 100 Ω, see Figure 11 –50 V to 50 V
I
O
Receiver output current –11 mA to 11 mA
A, B, and GND ±16 kV
Human body model
(3)
Electrostatic
All pins ±4 kV
discharge
Charged-device model
(4)
All pins charge ±1 kV
Continuous total power dissipation See Dissipation Rating Table
Electrical Fast Transient/Burst
(5)
A, B, and GND ±4 kV
T
J
Junction temperature 170°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
(3) Tested in accordance with JEDEC Standard 22, Test Method A114-A and IEC 60749-26.
(4) Tested in accordance with JEDEC Standard 22, Test Method C101.
(5) Tested in accordance with IEC 61000-4-4.
PACKAGE DISSIPATION RATINGS
PACKAGE T
A
≤ 25°C DERATING FACTOR
(1)
T
A
= 70°C T
A
= 85°C T
A
= 125°C
POWER RATING ABOVE T
A
= 25°C POWER RATING POWER RATING POWER RATING
D
(2)
597 mW 4.97 mW/°C 373 mW 298 mW 100 mW
D
(3)
990 mW 8.26 mW/°C 620 mW 496 mW 165 mW
P 1290 mW 10.75 mW/°C 806 mW 645 mW 215 mW
(1) This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
(2) Tested in accordance with the Low-K thermal metric definitions of EIA/JESD51-3.
(3) Tested in accordance with the High-K thermal metric definitions of EIA/JESD51-7.
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Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11
SN65HVD12 SN75HVD12