Datasheet
SN65HVD11-HT
SLLS934E –NOVEMBER 2008–REVISED JUNE 2012
www.ti.com
BARE DIE INFORMATION
BACKSIDE BOND PAD
DIE THICKNESS BACKSIDE FINISH
POTENTIAL METALLIZATION COMPOSITION
15 mils. Silicon with backgrind GND Cu-Ni-Pd
Table 1. Bond Pad Coordinates in Microns - Rev A
DESCRIPTION
(1)
PAD NUMBER a b c d
R 1 69.30 372.15 185.30 489.15
~RE 2 388.75 71.50 503.75 186.50
DNC 3 722.40 55.40 839.40 172.40
DNC 4 891.40 55.40 1008.40 172.40
DE 5 1174.80 71.50 1289.80 186.50
DNC 6 1754.35 65.40 1869.35 180.40
DNC 7 1907.35 65.40 2022.35 180.40
D 8 2280.55 69.50 2395.55 184.50
DNC 9 2733.50 371.50 2848.50 486.50
GND 10 2691 1693.10 2808 1810.10
GND 11 2535 1693.10 2652 1810.10
DNC 12 2253.45 1685.65 2368.45 1800.65
A 13 1961.55 1693.10 2078.55 1810.10
B 14 799.55 1693.10 916.55 1810.10
DNC 15 498.35 1681.20 613.35 1796.20
VCC 16 244.80 1668.50 359.80 1783.50
VCC 17 91.80 1668.50 206.80 1783.50
(1) DNC = Do Not Connect
2 Submit Documentation Feedback Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Link(s): SN65HVD11-HT