Datasheet

1000
10000
100000
1000000
110 120 130 140 150 160 170 180 190 200 210
Continuous T
J
(°C)
Estimated Life (Hours)
Electromigration Fail Mode
Wirebond Fail Mode
SN65HVD11-HT
SLLS934E –NOVEMBER 2008–REVISED JUNE 2012 www.ti.com
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(1) See data sheet for absolute maximum and minimum recommended operating conditions.
(2) Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect
life).
(3) The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the
dominant failure mechanism affecting device wearout for the specific device process and design characteristics.
(4) Wirebond fail mode applicable for D package only.
(5) Wirebond life approaches 0 hours < 200°C which is only true of the HD device.
Figure 1. SN65HVD11SJD/SKGDA/SHKJ/SHKQ/HD
Operating Life Derating Chart
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