Datasheet

SN65HVD1176
SN75HVD1176
SLLS563F –JULY 2003–REVISED JUNE 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Table 1. AVAILABLE OPTIONS
T
A
PACKAGED DEVICES
(1)
PACKAGE MARKING
(2)
0°C to 70°C SN75HVD1176D VN1176
-40°C to 85°C SN65HVD1176D VP1176
(1) The D package is available taped and reeled. Add an R suffix to the device type (for example, SN65HVD1176DR).
(2) For the most current package and ordering information, see the Package Option Addendum located at the end of this datasheet or see
the TI website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating junction temperature range unless otherwise noted
(1)
SN65HVD1176
UNIT
SN75HVD1176
V
CC
Supply voltage
(2)
–0.5 to 7 V
Voltage at any bus I/O terminal –9 to 14 V
Voltage input, transient pulse, A and B, (through 100 Ω, see Figure 15) –40 to 40 V
Voltage input at any D, DE or RE terminal –0.5 to 7 V
I
O
Receiver output current –10 to 10 mA
All pins 4 kV
Human Body Model,
Electrostatic discharge
Bus terminals and
(HBM)
(3)
10 kV
GND
T
J
Junction temperature 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal..
(3) Tested in accordance with JEDEC standard 22. test method A114-A..
RECOMMENDED OPERATING CONDITIONS
MIN TYP MAX UNIT
V
CC
Supply voltage 4.75 5 5.25 V
Voltage at either bus I/O terminal A, B –7 12 V
V
IH
High-level input voltage 2 V
CC
V
D, DE, RE
V
IL
Low-level input voltage 0 0.8 V
V
IL
Differential input voltage A with respect to B -12 12 V
Driver -70 70 mA
I
O
Output current
Receiver -8 8 mA
SN65HVD1176 -40 130 °C
T
J
Junction temperature
(1)
SN75HVD1176 0 130 °C
R
L
Differential load resistance 54 Ω
1/t
U1
Signaling rate 40 Mbps
(1) See the Thermal Characteristics table for more information on maintenance of this requirement.
2 Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated
Product Folder Links: SN65HVD1176 SN75HVD1176