Datasheet
SN65HVD1050
SLLS632B –DECEMBER 2005–REVISED MARCH 2010
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THERMAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Low-K thermal resistance
(1)
211
q
JA
Junction-to-Air
High-K thermal resistance 131
Junction-to-Board Thermal
°C/W
q
JB
53
Resistance
Junction-to-Case Thermal
q
JC
79
Resistance
V
CC
= 5.0 V, T
j
= 27°C, R
L
= 60 Ω, S at 0 V, Input to
TXD a 500 kHz, 50% duty cycle square wave. CL at 112 mW
RXD = 15 pF
P
D
Average power dissipation
V
CC
= 5.5 V, T
j
= 130°C, R
L
= 45 Ω, S at 0 V, Input to
TXD a 500 kHz, 50% duty cycle square wave. CL at 170
RXD = 15 pF
Junction temperature, thermal
T
J_shutdown
190 °C
shutdown
(2)
(1) Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface-mount packages.
(2) Extended operation in thermal shutdown may affect device reliability, see APPLICATIONS INFORMATION.
FUNCTION TABLES
Table 2. DRIVER
INPUTS OUTPUTS BUS STATE
TXD
(1)
S
(1)
CANH
(1)
CANL
(1)
L L or Open H L DOMINANT
H X Z Z RECESSIVE
Open X Z Z RECESSIVE
X H Z Z RECESSIVE
(1) H = high level; L = low level; X = irrelevant; ? = indeterminate; Z = high impedance
Table 3. RECEIVER
DIFFERENTIAL INPUTS OUTPUT RXD
(1)
BUS STATE
V
ID
= V(CANH) – V(CANL)
V
ID
≥ 0.9 V L DOMINANT
0.5 V < V
ID
< 0.9 V ? ?
V
ID
≤ 0.5 V H RECESSIVE
Open H RECESSIVE
(1) H = high level; L = low level; X = irrelevant; ? = indeterminate; Z = high impedance
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