Datasheet

SN65EPT23
SLLS969A – NOVEMBER 2009– REVISED JANUARY 2011 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
PARAMETER CONDITION VALUE UNIT
Absolute supply voltage, V
CC
GND = 0V 3.8 V
Absolute input voltage, V
I
GND = 0 and Vi ≤ V
CC
0 to 3.8 V
Continuous 50
Output current mA
Surge 100
Operating temperature range –40 to 85 °C
Storage temperature range –65 to 150 °C
POWER DISSIPATION RATINGS
POWER RATING THERMAL RESISTANCE, DERATING FACTOR POWER RATING
CIRCUIT BOARD
JUNCTION TO AMBIENT
PACKAGE T
A
< 25°C T
A
> 25°C T
A
= 85°C
MODEL
NO AIRFLOW
(mW) (mW/°C) (mW)
SOIC Low-K 719 139 7 288
High-K 840 119 8 336
MSOP Low-K 469 213 5 188
High-K 527 189 5 211
THERMAL CHARACTERISTICS
PARAMETER PACKAGE VALUE UNIT
q
JB
Junction-to Board Thermal Resistance SOIC 79 °C/W
MSOP 120
q
JC
Junction-to Case Thermal Resistance SOIC 98 °C/W
MSOP 74
KEY ATTRIBUTES
CHARACTERISTICS VALUE
Moisture sensitivity level Level 1
Flammability rating (Oxygen Index: 28 to 34) UL 94 V-0 at 0.125 in
ESD-HBM 2 kV
ESD-machine model 200 V
ESD-charge device model 2 kV
Internal pull down resistor 50 kΩ
Internal pull up resistor 50 kΩ
Meets or exceeds JEDEC Spec EIA/JESD78 latchup test
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