Datasheet
SN65EPT22
SLLS926A –DECEMBER 2008–REVISED NOVEMBER 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER CONDITION VALUE UNIT
Absolute supply voltage, V
CC
6 V
Absolute input voltage, VI GND = 0 and VI ≤ V
CC
0 to 6 V
Supply voltage LVPEL 3.3 V
Continuous 50
Output current mA
Surge 100
Operating temperature range –40 to 85 °C
Storage temperature range –65 to 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
POWER DISSIPATION RATINGS
POWER RATING THERMAL RESISTANCE, DERATING FACTOR POWER RATING
CIRCUIT BOARD
JUNCTION TO AMBIENT
PACKAGE T
A
< 25°C T
A
> 25°C T
A
= 85°C
MODEL
NO AIRFLOW
(mW) (mW/°C) (mW)
SOIC Low-K 719 139 7 288
High-K 840 119 8 336
SOIC-TSSOP Low-K 469 213 5 188
High-K 527 189 5 211
THERMAL CHARACTERISTICS
PARAMETER PACKAGE VALUE UNIT
q
JB
Junction-to Board Thermal Resistance SOIC 79 °C/W
SOIC-TSSOP 120
q
JC
Junction-to Case Thermal Resistance SOIC 98 °C/W
SOIC-TSSOP 74
KEY ATTRIBUTES
CHARACTERISTICS VALUE
Moisture sensitivity level Lead free package
SOIC-8 Level 1
TSSOP-8 Level 3
Flammability rating (Oxygen Index: 28 to 34) UL 94 V-0 at 0.125 in
ESD-HBM 4 kV
ESD-machine model 200 V
ESD-charge device model 2 kV
Meets or exceeds JEDEC Spec EIA/JESD78 latchup test
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