Datasheet

ABSOLUTE MAXIMUM RATINGS
(1)
POWER DISSIPATION RATINGS
THERMAL CHARACTERISTICS
KEY ATTRIBUTES
SN65ELT22
SLLS924 – DECEMBER 2008 ............................................................................................................................................................................................ www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PARAMETER CONDITIONS VALUE UNIT
Absolute PECL mode supply voltage, V
CC
GND = 0 V 6 V
Input voltage, V
IN
GND = 0 V GND + 0.025 < V
IN
< V
CC
– 0.025 V
Continuous 50
Output current mA
Surge 100
Operating temperature range – 40 to 85 ° C
Storage temperature range – 65 to 150 ° C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
POWER RATING THERMAL RESISTANCE, DERATING FACTOR POWER RATING
CIRCUIT BOARD
JUNCTION-TO-AMBIENT
PACKAGE T
A
< 25 ° C T
A
> 25 ° C T
A
= 85 ° C
MODEL
NO AIRFLOW
(mW) (mW/ ° C) (mW)
Low-K 719 139 7 288
SOIC
High-K 840 119 8 336
Low-K 469 213 5 188
SOIC-TSSOP
High-K 527 189 5 211
PARAMETER MIN TYP MAX UNIT
SOIC 79
θ
JB
Junction-to-board thermal resistance ° C/W
SOIC-TSSOP 120
SOIC 98
θ
JC
Junction-to-case thermal resistance ° C/W
SOIC-TSSOP 74
CHARACTERISTICS VALUE
Moisture sensitivity level Level 1
Flammability rating (oxygen index: 28 to 34) UL 94 V-0 at 0.125 in
Human body model 4 kV
Electrostatic discharge Charge device model 2 kV
Machine model 200 V
Meets or exceeds JEDEC Spec EIA/JESD78 latchup test
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