Datasheet

REF5020-EP, REF5025-EP
REF5040-EP, REF5050-EP
SBOS471A –APRIL 2010–REVISED JUNE 2010 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
(1)
PRODUCT OUTPUT VOLTAGE PACKAGE
(2)
ORDERABLE PART NUMBER TOP-SIDE MARKING
REF5020MDREP 2.048 V SOIC-D REF5020MDREP 5020EP
REF5025MDTEP 2.5 V SOIC-D REF5025MDTEP 5025EP
REF5040MDREP 4.096 V SOIC-D REF5040MDREP 5040EP
REF5050MDREP 5 V SOIC-D REF5050MDREP 5050EP
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER REF50xx UNIT
Input Voltage 18 V
Output Short-Circuit 30 mA
Operating Temperature Range –55 to 125 °C
Storage Temperature Range –65 to 150 °C
Junction Temperature (T
J
max) 150 °C
Human Body Model (HBM) 3000 V
ESD Rating
Charged Device Model (CDM) 1000 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
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Product Folder Link(s): REF5020-EP REF5025-EP REF5040-EP REF5050-EP