Datasheet

REF5020-Q1, REF5025-Q1, REF5030-Q1
REF5040-Q1, REF5045-Q1, REF5050-Q1
SBOS456G –SEPTEMBER 2008–REVISED OCTOBER 2013 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
REF50xx
PARAMETER MIN MAX UNIT
Input voltage 18 V
Output short-circuit 30 mA
Operating temperature range –40 125 °C
Storage temperature range –65 150 °C
Junction temperature (T
J
max) 150 °C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
ESD RATINGS
Over operating free-air temperature range (unless otherwise noted).
PARAMETER VALUE UNIT
REF5020AQDRQ1 500
REF5030AQDRQ1 1000
Human Body Model (HBM) REF5040AQDRQ1 500 V
ESD REF5045AQDRQ1 1000
REF5050AQDRQ1 500
Machine Model (MM) 200 V
Charged-Device Model (CDM) 1000 V
2 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated