Datasheet

REF5010, REF5020

REF5025, REF5030

REF5040, REF5045, REF5050

SBOS410F –JUNE 2007–REVISED DECEMBER 2013

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERING INFORMATION

(1)

PRODUCT OUTPUT VOLTAGE

STANDARD GRADE (8ppm, 0.1%)

REF5020A 2.048V

REF5025A 2.5V

REF5030A 3.0V

REF5040A 4.096V

REF5045A 4.5V

REF5050A 5.0V

REF5010A 10.0V

HIGH GRADE (3ppm, 0.05%)

REF5020I 2.048V

REF5025I 2.5V

REF5030I 3.0V

REF5040I 4.096V

REF5045I 4.5V

REF5050I 5.0V

REF5010I 10.0V

(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the

device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

REF50xx UNIT

Input Voltage +18 V

Output Short-Circuit 30 mA

Operating Temperature Range –55 to +125 °C

Storage Temperature Range –65 to +150 °C

Junction Temperature (T

max) +150 °C

Human Body Model (HBM) 3000 V

ESD Rating

Charged Device Model (CDM) 1000 V

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

Product Folder Links: REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050