Datasheet

ELECTRICAL CHARACTERISTICS
PTH04T240W , PTH04T241W
www.ti.com ...................................................................................................................................................... SLTS276D – OCTOBER 2006 – REVISED JULY 2009
PTH04T241W (Ceramic Capacitors)
T
A
= 25 ° C, V
I
= 5 V, V
O
= 3.3 V, C
I
= 200 µ F ceramic, C
O
= 300 µ F ceramic, and I
O
= I
O
max (unless otherwise stated)
PARAMETER TEST CONDITIONS PTH04T241W UNIT
MIN TYP MAX
I
O
Output current Over V
O
range 25 ° C, natural convection 0 10 A
0.69 ≤ V
O
≤ 1.7 2.2 5.5
V
I
Input voltage range Over I
O
range V
1.7 < V
O
≤ 3.6 V
O
+0.5
(1)
5.5
V
OADJ
Output voltage adjust range Over I
O
range 0.69 3.6 V
Set-point voltage tolerance ± 0.5 ± 1
(2)
%V
o
Temperature variation – 40 ° C < T
A
< 85 ° C ± 0.3 %V
o
V
O
Line regulaltion Over V
I
range ± 3 mV
Load regulation Over I
O
range ± 2 mV
Total output variation Includes set-point, line, load, – 40 ° C ≤ T
A
≤ 85 ° C ± 1.5
(2)
%V
o
R
SET
= 1.21 k Ω , V
O
= 3.3 V 94%
R
SET
= 2.38 k Ω , V
O
= 2.5 V 92%
R
SET
= 4.78 k Ω , V
O
= 1.8 V 90%
η Efficiency I
O
= 10 A R
SET
= 7.09 k Ω , V
O
= 1.5 V 88%
R
SET
= 12.1 k Ω , V
O
= 1.2 V 87%
R
SET
= 20.8 k Ω , V
O
= 1.0 V 85%
R
SET
= 689 k Ω , V
O
= 0.7 V 80%
V
O
Ripple (peak-to-peak) 20-MHz bandwidth 20 mV
PP
I
LIM
Overcurrent threshold Reset, followed by auto-recovery 20 A
t
tr
w/o TurboTrans Recovery time 60 µ s
C
O
= 300 µ F, TypeA
mV
Δ V
tr
2.5 A/ µ s load step V
O
over/undershoot 110
R
TT
= open
Transient response 50 to 100% I
O
max
t
trTT
w/ TurboTrans Recovery time 80 µ s
V
O
= 2.5 V
C
O
= 3000 µ F, TypeA
mV
Δ V
trTT
V
O
over/undershoot 33
R
TT
= short
I
IL
Track input current (pin 10) Pin to GND – 130
(3)
µ A
dV
track
/dt Track slew rate capability C
O
≤ C
O
(max) 1 V/ms
V
I
increasing, R
UVLO
= OPEN 1.95 2.19
Adjustable Under-voltage lockout
UVLO
ADJ
V
i
decreasing, R
UVLO
= OPEN 1.30 1.50 V
(pin 11)
Hysteresis, R
UVLO
= OPEN 0.5
Input high voltage (V
IH
) Open
(4)
V
Inhibit control (pin 11) Input low voltage (V
IL
) -0.2 0.8
Input low current (I
IL
), Pin 11 to GND 235 µ A
I
in
Input standby current Inhibit (pin 11) to GND, Track (pin 10) open 5 mA
f
s
Switching frequency Over V
I
and I
O
ranges, SmartSync (pin 1) to GND 300 kHz
Synchronization (SYNC)
f
SYNC
240 400 kHz
frequency
V
SYNCH
SYNC High-Level Input Voltage 2 5.5 V
V
SYNCL
SYNC Low-Level Input Voltage 0.8 V
t
SYNC
SYNC Minimum Pulse Width 200 ns
C
I
External input capacitance 200
(5)
µ F
(1) The minimum input voltage is 2.2 V or (V
O
+ 0.5) V, whichever is greater.
(2) The set-point voltage tolerance is affected by the tolerance and stability of R
SET
. The stated limit is unconditionally met if R
SET
has a
tolerance of 1% with 100 ppm/C or better temperature stability. .
(3) A low-leakage ( < 100 nA), open-drain device, such as MOSFET or voltage supervisor IC, is recommended to control pin 10. The
open-circuit voltage is less than V
I
.
(4) This control pin has an internal pull-up. Do not place an external pull-up on this pin. If it is left open-circuit, the module operates when
input power is applied. A small, low-leakage ( < 100 nA) MOSFET is recommended for control. The open-circuit voltage is less than
3.5Vdc. For additional information, see the related application note.
(5) 200 µ F of input capacitance is required for proper operation. 200 µ F of ceramic or 220 µ F of electrolytic input capacitance can be used.
Electrolytic capacitance must be rated for a minimum of 500 mA rms of ripple current. An additional 22- µ F ceramic input capacitor is
recommended to reduce rms ripple current.
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