Datasheet

D+
28
27
26
25
24
23
22
21
20
19
1
2
3
4
5
6
7
8
9
10
Device
D–
V
BUS
DGNDU
HID0
HID1
HID2
SEL0
SEL1
V
CCCI
SSPND
XTI
V
DDI
DGND
DOUT
DIN
XTO
V
CCP2I
AGNDX
V
CCXI
D+
D–
C
1
11
12
13
14
AGNDC
V L
IN
V R
IN
V
COM
18
17
16
15
V
CCP1I
V L
OUT
V R
OUT
AGNDP
22 W
22 W
1.5 k 3W ´
1.5 kW
GND
V
BUS
C
2
C
9
C
10
1 MW
12 MHz
C
5
C
6
C
3
C
8
C
11
C
12
LPF,
Amp
LPF,
Amp
C
7
C
4
3.60 V–
3.85 V
13 kW27 kW
IN
1
OUT
2
GND
3
ADJ
4
EN
5
IC1
MUTE/
Power
Down
+
+
C
13
+
+
+
+
D
1
2.2 W
1 Fm
S0264-02
PCM2906C
SBFS037 –NOVEMBER 2011 www.ti.com
APPLICATION INFORMATION
TYPICAL CIRCUIT CONNECTION 1
Figure 36 illustrates a typical circuit connection for a simple application. The circuit illustrated is for information
only. The entire board design should be considered to meet the USB specification as a USB-compliant product.
NOTE: C
1
, C
2
: 10 μF
C
3
, C
4
, C
7
, C
8
, C
13
: 1 μF (These capacitors must be less than 2 μF.)
C
5
, C
6
: 10 pF to 33 pF (depending on crystal resonator)
C
9
, C
10
, C
11
, C
12
: The capacitance may vary depending on design.
IC1: REG103xA-A (TI) or equivalent. Analog performance may vary depending on IC1.
D
1
: Schottky barrier diode (V
F
≤ 350 mV at 10 mA, I
R
≤ 2 μA at 4 V)
Figure 36. Bus-Powered Configuration for High-Performance Application
24 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): PCM2906C