Datasheet

OPA861
www.ti.com SBOS338G –AUGUST 2005–REVISED MAY 2013
ELECTRICAL CHARACTERISTICS: V
S
= ±5V
R
L
= 500Ω and R
ADJ
= 250Ω, unless otherwise noted.
OPA861ID, IDBV
TYP MIN/MAX OVER TEMPERATURE
0°C to –40°C to MIN/ TEST
PARAMETER CONDITIONS +25°C +25°C
(2)
70°C
(3)
+85°C
(3)
UNITS MAX LEVEL
(1)
OTA—Open-Loop (see Figure 33)
AC PERFORMANCE
G = +5, V
O
= 200mV
PP
,
Bandwidth 80 77 75 74 MHz min B
R
L
= 500Ω
G = +5, V
O
= 1V
PP
80 MHz typ C
G = +5, V
O
= 5V
PP
80 MHz typ C
Slew Rate G = +5, V
O
= 5V Step 900 860 850 840 V/µs min B
Rise Time and Fall Time V
O
= 1V Step 4.4 ns typ C
Harmonic Distortion G = +5, V
O
= 2V
PP
, 5MHz
2nd-Harmonic R
L
= 500Ω –68 –55 –54 –53 dB max B
3rd-Harmonic R
L
= 500Ω –57 –52 –51 –49 dB max B
Base Input Voltage Noise f > 100kHz 2.4 3.0 3.3 3.4 nV/√Hz max B
Base Input Current Noise f > 100kHz 1.7 2.4 2.45 2.5 pA/√Hz max B
Emitter Input Current Noise f > 100kHz 5.2 15.3 16.6 17.5 pA/√Hz max B
OTA DC PERFORMANCE
(4)
(see Figure 33)
Minimum OTA Transconductance (g
m
) V
O
= ±10mV, R
C
= 50Ω, R
E
= 0Ω 95 80 77 75 mA/V min A
Maximum OTA Transconductance (g
m
) V
O
= ±10mV, R
C
= 50Ω, R
E
= 0Ω 95 150 155 160 mA/V max A
B-Input Offset Voltage V
B
= 0V, R
C
= 0Ω, R
E
= 100Ω ±3 ±12 ±15 ±20 mV max A
Average B-Input Offset Voltage Drift V
B
= 0V, R
C
= 0Ω, R
E
= 100Ω ±67 ±120 μV/°C max B
B-Input Bias Current V
B
= 0V, R
C
= 0Ω, R
E
= 100Ω ±1 ±5 ±6 ±6.6 μA max A
Average B-Input Bias Current Drift V
B
= 0V, R
C
= 0Ω, R
E
= 100Ω ±20 ±25 nA/°C max B
E-Input Bias Current V
B
= 0V, V
C
= 0V ±30 ±100 ±125 ±140 μA max A
Average E-Input Bias Current Drift V
B
= 0V, V
C
= 0V ±500 ±600 nA/°C max B
C-Output Bias Current V
B
= 0V, V
C
= 0V ±5 ±18 ±30 ±38 μA max A
Average C-Output Bias Current Drift V
B
= 0V, V
C
= 0V ±250 ±300 nA/°C max B
OTA INPUT (see Figure 33)
B-Input Voltage Range ±4.2 ±3.7 ±3.6 ±3.6 V min B
B-Input Impedance 455 || 2.1 kΩ || pF typ C
Min E-Input Resistance 10.5 12.5 13.0 13.3 Ω max B
Max E-Input Resistance 10.5 6.7 6.5 6.3 Ω min B
OTA OUTPUT
E-Output Voltage Compliance I
E
= ±1mA ±4.2 ±3.7 ±3.6 ±3.6 V min A
E-Output Current, Sinking/Sourcing V
E
= 0 ±15 ±10 ±9 ±9 mA min A
C-Output Voltage Compliance I
C
= ±1mA ±4.7 ±4.0 ±3.9 ±3.9 V min A
C-Output Current, Sinking/Sourcing V
C
= 0 ±15 ±10 ±9 ±9 mA min A
C-Output Impedance 54 || 2 kΩ || pF typ C
(1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25°C specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 7°C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of node.
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