Datasheet
ELECTRICAL CHARACTERISTICS: V
S
= ± 5V
OPA860
www.ti.com
....................................................................................................................................................... SBOS331C – JUNE 2005 – REVISED AUGUST 2008
R
L
= 500 Ω and R
ADJ
= 250 Ω , unless otherwise noted.
OPA860ID
TYP MIN/MAX OVER TEMPERATURE
0 ° C to – 40 ° C to MIN/ TEST
PARAMETER CONDITIONS +25 ° C +25 ° C
(2)
70 ° C
(3)
+85 ° C
(3)
UNITS MAX LEVEL
(1)
Closed Loop OTA + BUFFER (see Figure 53 )
AC PERFORMANCE G = +2, See Figure 53
Bandwidth V
O
= 200mV
PP
470 380 375 370 MHz min B
V
O
= 1V
PP
470 MHz typ C
V
O
= 5V
PP
350 MHz typ C
Bandwidth for 0.1dB Gain Flatness V
O
= 200mV
PP
42 MHz typ C
Slew Rate V
O
= 5V Step 3500 3000 2800 2700 V/ µ s typ C
Rise Time and Fall Time V
O
= 1V Step 0.7 ns typ C
Harmonic Distortion G = +2, V
O
= 2V
PP
, 5MHz
2nd-Harmonic R
L
= 100 Ω – 54 dBc typ C
R
L
= 500 Ω – 77 dBc typ C
3rd-Harmonic R
L
= 100 Ω – 66 dBc typ C
R
L
= 500 Ω – 79 dBc typ C
OTA - Open-Loop (see Figure 48 )
AC PERFORMANCE
G = +5, V
O
= 200mV
PP
,
Bandwidth 80 77 75 74 MHz min B
R
L
= 500 Ω
G = +5, V
O
= 1V
PP
80 MHz typ C
G = +5, V
O
= 5V
PP
80 MHz typ C
Slew Rate G = +5, V
O
= 5V Step 900 860 850 840 V/ µ s min B
Rise Time and Fall Time V
O
= 1V Step 4.4 ns typ C
Harmonic Distortion G = +5, V
O
= 2V
PP
, 5MHz
2nd-Harmonic R
L
= 500 Ω – 68 – 55 – 54 – 53 dB max B
3rd-Harmonic R
L
= 500 Ω – 57 – 52 – 51 – 49 dB max B
Base Input Voltage Noise f > 100kHz 2.4 3.0 3.3 3.4 nV/ √ Hz max B
Base Input Current Noise f > 100kHz 1.65 2.4 2.45 2.5 pA/ √ Hz max B
Emitter Input Current Noise f > 100kHz 5.2 15.3 16.6 17.5 pA/ √ Hz max B
OTA DC PERFORMANCE
(4)
(see Figure 48 )
Min OTA Transconductance V
O
= ± 10mV, R
C
= 0 Ω , R
E
= 0 Ω 95 80 77 75 mA/V min A
Max OTA Transconductance V
O
= ± 10mV, R
C
= 0 Ω , R
E
= 0 Ω 95 150 155 160 mA/V min A
B-Input Offset Voltage V
B
= 0V, R
C
= 0 Ω , R
E
= 100 Ω ± 3 ± 12 ± 15 ± 20 mV max A
Average B-Input Offset Voltage Drift V
B
= 0V, R
C
= 0 Ω , R
E
= 100 Ω ± 3 ± 67 ± 120 µ V/ ° C max B
B-Input Bias Current V
B
= 0V, R
C
= 0 Ω , R
E
= 100 Ω ± 1 ± 5 ± 6 ± 6.6 µ A max A
Average B-Input Bias Current Drift V
B
= 0V, R
C
= 0 Ω , R
E
= 100 Ω ± 20 ± 25 nA/ ° C max B
E-Input Bias Current V
B
= 0V, V
C
= 0V ± 30 ± 100 ± 125 ± 140 µ A max A
Average E-Input Bias Current Drift V
B
= 0V, V
C
= 0V ± 500 ± 600 nA/ ° C max B
C-Output Bias Current V
B
= 0V, V
C
= 0V ± 5 ± 18 ± 30 ± 38 µ A max A
Average C-Output Bias Current Drift V
B
= 0V, V
C
= 0V ± 250 ± 300 nA/ ° C max B
OTA INPUT (see Figure 48 )
B-Input Voltage Range ± 4.2 ± 3.7 ± 3.6 ± 3.6 V min B
B-Input Impedance 455 || 2.1 k Ω || pF typ C
Min E-Input Input Resistance 10.5 12.5 13.0 13.3 Ω min B
Max E-Input Input Resistance 10.5 6.7 6.5 6.3 Ω max B
(1) Test levels: (A) 100% tested at +25 ° C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25 ° C specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 8 ° C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of node. V
CM
is the input common-mode voltage.
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