Datasheet

OPA847
3
SBOS251E
www.ti.com
OPA847ID, IDBV
TYP MIN/MAX OVER TEMPERATURE
0 ° C to –40 ° C to MIN/ TEST
PARAMETER CONDITIONS +25°C +25°C
(1)
70°C
(2)
+85°C
(2)
UNITS MAX LEVEL
(3)
ELECTRICAL CHARACTERISTICS: V
S
= ±5V
Boldface limits are tested at +25°C.
R
L
= 100Ω, R
F
= 750Ω, R
G
= 39.2Ω, and G = +20 (see Figure 1 for AC performance only), unless otherwise noted.
NOTES: (1) Junction temperature = ambient for +25°C specifications. (2) Junction temperature = ambient at low temperature limit: junction temperature = ambient +23°C
at high temperature limit for over temperature specifications. (3) Test Levels: (A) 100% tested at 25°C. Over temperature limits by characterization and simulation.
(B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. V
CM
is the input common-mode
voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits.
AC PERFORMANCE (see Figure 1)
Closed-Loop Bandwidth G = +12, R
G
= 39.2Ω, V
O
= 200mV
PP
600 MHz typ C
G = +20, R
G
= 39.2Ω, V
O
= 200mV
PP
350 230 210 195 MHz min B
G = +50, R
G
= 39.2Ω, V
O
= 200mV
PP
78 63 60 57 MHz min B
Gain Bandwidth Product (GBP) G ≥ [phone] 2800 MHz min B
Bandwidth for 0.1dB Gain Flatness G = +20, R
L
= 100Ω 60 40 35 30 MHz min B
Peaking at a Gain of +12 4.5 7 10 12 dB max B
Harmonic Distortion G = +20, f = 5MHz, V
O
= 2V
PP
2nd-Harmonic R
L
= 100Ω –74 –70 –69 –68 dBc max B
R
L
= 500Ω –105 –90 –89 –88 dBc max B
3rd-Harmonic R
L
= 100Ω –103 –96 –91 –88 dBc max B
R
L
= 500Ω –110 –105 –100 –90 dBc max B
2-Tone, 3rd-Order Intercept G = +20, f = 20MHz 39 37 36 35 dBm min B
Input Voltage Noise Density f > 1MHz 0.85 0.92 0.98 1.0 nV/
√Hz
max B
Input Current Noise Density f > 1MHz 2.5 3.5 3.6 3.7 pA/
√Hz
max B
Pulse Response
Rise-and-Fall Time 0.2V Step 1.2 1.75 2.0 2.2 ns max B
Slew Rate 2V Step 950 700 625 535 V/µsminB
Settling Time to 0.01% 2V Step 20 ns typ C
0.1% 2V Step 10 12 14 18 ns max B
1% 2V Step 6 8 10 12 ns max B
DC PERFORMANCE
(4)
Open-Loop Voltage Gain (A
OL
)V
O
= 0V 98 90 89 88 dB min A
Input Offset Voltage V
CM
= 0V ±0.1 ±0.5 ±0.58 ±0.60 mV max A
Average Offset Voltage Drift V
CM
= 0V ±0.25 ±0.25 ±1.5 ±1.5 µV/°CmaxB
Input Bias Current V
CM
= 0V –19 –39 –41 –42 µAmaxA
Input Bias Current Drift (magnitude) V
CM
= 0V –15 –15 –40 –70 nA/°CmaxB
Input Offset Current V
CM
= 0V ±0.1 ±0.6 ±0.7 ±0.85 µAmaxA
Input Offset Current Drift V
CM
= 0V ±0.1 ±0.1 ±2 ±3.5 nA/°CmaxB
INPUT
Common-Mode Input Range (CMIR)
(5)
±3.3 ±3.1 ±3.0 ±2.9 V min A
Common-Mode Rejection Ratio (CMRR) V
CM
= ±0.5V, Input-Referred 110 95 93 90 dB min A
Input Impedance
Differential V
CM
= 0V 2.7 || 2.0 kΩ || pF typ C
Common-Mode V
CM
= 0V 2.3 || 1.7 MΩ || pF typ C
OUTPUT
Output Voltage Swing ≥ 400Ω Load ±3.5 ±3.3 ±3.1 ±3.0 V min A
100Ω Load ±3.4
±3.2 ±3.0 ±2.9 V min A
Current Output, Sourcing V
O
= 0V 100 60 56 52 mA min A
Current Output, Sinking V
O
= 0V –75 –60 –56 –52 mA min A
Closed-Loop Output Impedance G = +20, f = < 100kHz 0.003 Ω typ C
POWER SUPPLY
Specified Operating Voltage ±5 V typ C
Maximum Operating Voltage ±6
±6 ±6 ±6VmaxA
Maximum Quiescent Current V
S
= ±5V 18.1 18.4 18.7 18.9 mA max A
Minimum Quiescent Current V
S
= ±5V 18.1 17.8 17.5 17.1 mA min A
Power-Supply Rejection Ratio
+PSRR, –PSRR |V
S
| = 4.5V to 5.5V, Input-Referred 100 95 93 90 dB min A
POWER-DOWN (disabled low) (Pin 8 on SO-8; Pin 5 on SOT23-6)
Power-Down Quiescent Current (+V
S
) –200 –270 –320 –370 µAmaxA
On Voltage (enabled high or floated) 3.5 3.75 3.85 3.95 V min A
Off Voltage (disabled asserted low) 1.8 1.7 1.6 1.5 V max A
Power-Down Pin Input Bias Current (V
DIS
= 0) 150 190 200 210 µAmaxA
Power-Down Time 200 ns typ C
Power-Up Time 60 ns typ C
Off Isolation 5MHz, Input to Output 70 dB typ C
THERMAL
Specification ID, IDBV
–40 to +85 °C typ C
Thermal Resistance,
θ
JA
Junction-to-Ambient
DSO-8 125 °C/W typ C
DBV SOT23 150 °C/W typ C