Datasheet

OPA843
3
SBOS268C
www.ti.com
AC PERFORMANCE (see Figure 1)
Small-Signal Bandwidth (V
O
= 200mV
PP
) G = +3 500 MHz typ C
G = [phone] MHz min B
G = [phone] MHz min B
G = [phone] MHz min B
Gain-Bandwidth Product 800 562 560 558 MHz min B
Bandwidth for 0.1dB Gain Flatness G = +5, R
L
= 100Ω, V
O
= 200mV
PP
65 34 33 32 MHz min B
Peaking at a Gain of +3 3.5 dB typ C
Harmonic Distortion G = +5, f = 5MHz, V
O
= 2V
PP
2nd-Harmonic R
L
= 100Ω –76 –74 –72 –70 dBc max B
R
L
= 500Ω –96 –94 –92 –90 dBc max B
3rd-Harmonic R
L
= 100Ω –102 –100 –98 –95 dBc max B
R
L
= 500Ω –110 –105 –102 –100 dBc max B
2-Tone, 3rd-Order Intercept G = +5, f = 25MHz 40 dBm typ C
Input Voltage Noise f > 1MHz 2.0 2.2 2.31 2.36 nV/
√Hz
max B
Input Current Noise f > 1MHz 2.8 3.35 3.4 3.45 pA/
√Hz
max B
Rise-and-Fall Time 0.2V Step 1.2 1.95 2.0 2.1 ns max B
Slew Rate 2V Step 1000 650 600 525 V/µsmin B
Settling Time to 0.01% 2V Step 10.5 ns typ C
0.1% 2V Step 7.5 10 10.3 10.6 ns max B
1.0% 2V Step 3.2 5.4 5.8 6.4 ns max B
Differential Gain G = +4, NTSC, R
L
= 150Ω 0.001 % typ C
Differential Phase G = +4, NTSC, R
L
= 150Ω 0.012 deg typ C
DC PERFORMANCE
(4)
Open-Loop Voltage Gain (A
OL
)V
O
= 0V 110 100 96 92 dB min A
Input Offset Voltage V
CM
= 0V ±0.30 ±1.20 ±1.4 ±1.5 mV max A
Average Offset Voltage Drift V
CM
= 0V ±4 ±4 µV/°Cmax B
Input Bias Current V
CM
= 0V –20 –35 –36 –37 µAmaxA
Input Bias Current Drift V
CM
= 0V 25 25 nA/°Cmax B
Input Offset Current V
CM
= 0V ±0.25 ±1.0 ±1.15 ±1.17 µAmaxA
Input Offset Current Drift V
CM
= 0V ±2 ±2 nA/°Cmax B
INPUT
Common-Mode Input Range (CMIR)
(5)
±3.2 ±3.0 ±2.9 ±2.8 V min A
Common-Mode Rejection (CMRR) V
CM
= ±1V, Input Referred 95 85 84 82 dB min A
Input Impedance
Differential-Mode V
CM
= 0V 12 || 1 kΩ || pF typ C
Common-Mode V
CM
= 0V 3.2 || 1.2 MΩ || pF typ C
OUTPUT
Output Voltage Swing R
L
> 1kΩ, Positive Output 3.2 3.0 2.9 2.8 V min A
R
L
> 1kΩ, Negative Output –3.7 –3.5 –3.4 –3.3 V min A
R
L
= 100Ω, Positive Output 3.0 2.8 2.7 2.6 V min A
R
L
= 100Ω, Negative Output –3.5 –3.3 –3.2 –3.1 V min A
Current Output V
O
= 0V ±100 ±90 ±85 ±80 mA min A
Closed-Loop Output Impedance G = +5, f = 1kHz 0.0001 Ω typ C
POWER SUPPLY
Specified Operating Voltage ±5 V typ C
Maximum Operating Voltage
±6 ±6 ±6VmaxA
Minimum Operating Voltage
±4 ±4 ±4VminA
Max Quiescent Current V
S
= ±5V 20.2 20.8 22.2 22.5 mA max A
Min Quiescent Current V
S
= ±5V 20.2 19.6 19.1 18.3 mA min A
Power-Supply Rejection Ratio
(+PSRR, –PSRR) |V
S
| = 4.5V to 5.5V, Input Referred 100 90 88 85 dB min A
THERMAL CHARACTERISTICS
Specified Operating Range: D, DBV
–40 to +85 °C typ C
Thermal Resistance,
θ
JA
Junction-to-Ambient
D SO-8 125 °C typ C
DBV SOT23-5 150 °C typ C
OPA843ID, OPA843IDBV
TYP MIN/MAX OVER TEMPERATURE
0 ° C to –40 ° C to MIN/ TEST
PARAMETER CONDITIONS +25°C +25°C
(1)
70°C +85°C
(2)
UNITS MAX LEVEL
(3 )
ELECTRICAL CHARACTERISTICS: V
S
= ±5V
Boldface limits are tested at +25°C.
At T
A
= +25°C, V
S
= ±5V, R
F
= 402Ω, R
L
= 100Ω, and G = +5, unless otherwise noted. See Figure 1 for AC performance.
NOTES: (1) Junction temperature = ambient temperature for 25°C min/max specifications. (2) Junction temperature = ambient at low temperature limit: junction
temperature = ambient +23°C at high temperature limit for over temperature min/max specifications. (3) Test Levels: (A) 100% tested at 25°C over-temperature
limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out-
of-node. V
CM
is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits.