Datasheet

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SBOS266E − JUNE 2003 − REVISED AUGUST 2008
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4
ELECTRICAL CHARACTERISTICS: V
S
= +5V
Boldface limits are tested at +25°C.
At T
A
= 25°C, G = +2, and R
L
= 150Ω to V
CM
= 2V, unless otherwise noted (see Figure 1).
OPA832ID, IDBV
TYP MIN/MAX OVER TEMPERATURE
PARAMETER CONDITIONS
+25°C +25°C
(1)
0°C to
70°C
(2)
−40°C to
+85°C
(2)
UNITS
MIN/
MAX
TEST
LEVEL
(3)
AC PERFORMANCE (see Figure 1)
Small-Signal Bandwidth G = +2, V
O
≤ 0.5V
PP
92 56 55 55 MHz min B
G = −1, V
O
≤ 0.5V
PP
103 60 58 58 MHz min B
Peaking at a Gain of +1 V
O
≤ 0.5V
PP
4.2 dB typ C
Slew Rate G = +2, 2V Step 348 230 223 223 V/µs min B
Rise Time 0.5V Step 4.3 ns max B
Fall Time 0.5V Step 4.6 ns max B
Settling Time to 0.1% G = +2, 1V Step 4.6 ns max B
Harmonic Distortion V
O
= 2V
PP
, 5MHz
2nd-Harmonic R
L
= 150Ω −59 −56 −56 −55 dBc max B
R
L
= 500Ω −62 −59 −59 −59 dBc max B
3rd-Harmonic R
L
= 150Ω −56 −50 −49 −47 dBc max B
R
L
= 500Ω −72 −65 −62 −58 dBc max B
Input Voltage Noise f > 1MHz 9.3 nV/√Hz max B
Input Current Noise f > 1MHz 2.3 pA/√Hz max B
NTSC Differential Gain R
L
= 150Ω 0.11 % typ C
NTSC Differential Phase R
L
= 150Ω 0.14 ° typ C
DC PERFORMANCE
(4)
Gain Error G = +2 ±0.3 ±1.5 ±1.6 ±1.7 % min A
G = −1 ±0.2 ±1.5 ±1.6 ±1.7 % max B
Internal R
F
and R
G
, Maximum 400 455 460 462 Ω max A
Minimum 400 345 340 338 Ω max A
Average Drift 0.1 0.1 %/°C max B
Input Offset Voltage ±0.5 ±5 ±6 ±6.5 mV max A
Average Offset Voltage Drift — ±20 ±20 µV/°C max B
Input Bias Current V
CM
= 2.0V 5.5 +10 +12 +13 µA max A
Input Bias Current Drift ±12 ±12 nA/°C max B
Input Offset Current V
CM
= 2.0V ±0.1 ±1.5 ±2 ±2.5 µA max A
Input Offset Current Drift — ±10 ±10 nA/°C max B
INPUT
Least Positive Input Voltage −0.5 −0.2 0 +0.1 V max B
Most Positive Input Voltage 3.3 3.2 3.1 3.0 V min B
Input Impedance
Differential-Mode 10  2.1 kΩ pF typ C
Common-Mode 400  1.2 kΩ pF typ C
OUTPUT
Least Positive Output Voltage R
L
= 1kΩ to 2.0V 0.03 0.16 0.18 0.20 V max A
R
L
= 150Ω to 2.0V 0.18 0.3 0.35 0.40 V max A
Most Positive Output Voltage R
L
= 1kΩ to 2.0V 4.94 4.8 4.6 4.4 V min A
R
L
= 150Ω to 2.0V 4.86 4.6 4.5 4.4 V min A
Current Output, Sourcing 80 60 55 52 mA min A
Current Output, Sinking 80 60 55 52 mA min A
Short-Circuit Output Current Output Shorted to Either Supply 100 mA typ C
Closed-Loop Output Impedance G = +2, f ≤ 100kHz 0.2 Ω typ C
POWER SUPPLY
Minimum Operating Voltage +2.8 V typ C
Maximum Operating Voltage — +11 +11 +11 V max A
Maximum Quiescent Current V
S
= +5V 3.9 4.1 4.8 5.5 mA max A
Minimum Quiescent Current V
S
= +5V 3.9 3.7 3.5 3.2 mA min A
Power-Supply Rejection Ratio (PSRR) Input-Referred 66 61 60 59 dB min A
THERMAL CHARACTERISTICS
Specification: ID, IDBV −40 to +85 °C typ C
Thermal Resistance
D SO-8 125 °C/W typ C
DBV SOT23-5 150 °C/W typ C
(1)
Junction temperature = ambient for +25°C specifications.
(2)
Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over temperature.
(3)
Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only
for information.
(4)
Current is considered positive out of node.