Datasheet
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SBOS266E − JUNE 2003 − REVISED AUGUST 2008
www.ti.com
12
TYPICAL CHARACTERISTICS: V
S
= +3.3V
At T
A
= 25°C, G = +2, and R
L
= 150Ω to V
CM
= 0.75V, unless otherwise noted (see Figure 2).
3
0
−
3
−
6
−
9
−
12
−
15
SMALL−SIGNAL FREQUENCY RESPONSE
Frequency (MHz)
Normalized Gain (dB)
1 10 100 300
G=
−
1
G=+2
V
O
=0.2V
PP
R
L
=150
Ω
1.65
1.60
1.55
1.50
1.45
1.40
1.35
SMALL−SIGNAL PULSE RESPONSE
Time (10ns/div)
Output Voltage (V)
G=+2V/V
R
L
=150
Ω
V
O
= 200mV
PP
60
50
40
30
20
10
0
REQUIRED R
S
vs CAPACITIVE LOAD
Capacitive Load (pF)
R
S
(
Ω
)
1 10 100 1k
1dB Peaking Targeted
3
0
−
3
−
6
−
9
−
12
−
15
LARGE−SIGNAL FREQUENCY RESPONSE
Frequency (MHz)
Normalized Gain (dB)
1 10 100 300
V
O
=0.5V
PP
V
O
=1V
PP
V
O
=2V
PP
R
L
=150
Ω
G=+2V/V
2.1
1.9
1.7
1.5
1.3
1.1
0.9
LARGE−SIGNAL PULSE RESPONSE
Time (10ns/div)
Output Voltage (V)
G=+2V/V
R
L
=150
Ω
V
O
=1V
PP
3
0
−
3
−
6
−
9
−
12
−
15
FREQUENCY RESPONSE vs CAPACITIVE LOAD
Frequency (MHz)
Normalized Gain to Capacitive Load (dB)
110100300
C
L
= 1000pF
C
L
= 100pF
C
L
=10pF