Datasheet

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SBOS263F − AUGUST 2004 − REVISED AUGUST 2008
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3
ELECTRICAL CHARACTERISTICS: V
S
= ±5V
Boldface limits are tested at +25°C.
At T
A
= 25°C, G = +2, R
F
= 750Ω, and R
L
= 150Ω to GND, unless otherwise noted (see Figure 3).
OPA830ID, IDBV
TYP MIN/MAX OVER TEMPERATURE
TEST
PARAMETER CONDITIONS
+25°C +25°C
(1)
0°C to
70°C
(2)
−40°C to
+85°C
(2)
UNITS
MIN/
MAX
TEST
LEVEL
(3)
AC PERFORMANCE (see Figure 3)
Small-Signal Bandwidth G = +1, V
O
≤ 0.2V
PP
310 MHz typ C
G = +2, V
O
≤ 0.2V
PP
120 70 68 65 MHz min B
G = +5, V
O
≤ 0.2V
PP
25 18 16 15 MHz min B
G = +10, V
O
≤ 0.2V
PP
11 8 7 6 MHz min B
Gain-Bandwidth Product G ≥ [phone] MHz min B
Peaking at a Gain of +1 V
O
≤ 0.2V
PP
6 dB typ C
Slew Rate G = +2, 2V Step 600 280 270 260 V/µs min B
Rise Time 0.5V Step 3.3 5.8 5.85 5.9 ns max B
Fall Time 0.5V Step 3.5 5.9 5.95 6.0 ns max B
Settling Time to 0.1% G = +2, 1V Step 42 63 65 66 ns max B
Harmonic Distortion V
O
= 2V
PP
, f = 5MHz
2nd-Harmonic R
L
= 150Ω −67 −59 −57 −56 dBc max B
R
L
≥ 500Ω −71 −62 −61 −60 dBc max B
3rd-Harmonic R
L
= 150Ω −60 −50 −49 −48 dBc max B
R
L
≥ 500Ω −77 −65 −62 −59 dBc max B
Input Voltage Noise f > 1MHz 9.5 10.5 11.0 11.5 nV/√Hz max B
Input Current Noise f > 1MHz 3.7 4.7 5.2 5.7 pA/√Hz max B
NTSC Differential Gain 0.07 % typ C
NTSC Differential Phase 0.17 ° typ C
DC PERFORMANCE
(4)
R
L
= 150Ω
Open-Loop Voltage Gain 74 66 65 64 dB min A
Input Offset Voltage ±1.5 ±7 ±8.1 ±8.6 mV max A
Average Offset Voltage Drift — ±25 ±25 µV/°C max B
Input Bias Current V
CM
= 0V +5 +10 +12 +13 µA max A
Input Bias Current Drift ±12 ±12 nA/°C max B
Input Offset Current V
CM
= 0V ±0.1 ±1 ±1.2 ±1.4 µA max A
Input Offset Current Drift — ±5 ±5 nA/°C max B
INPUT
Negative Input Voltage
(5)
−5.5 −5.4 −5.3 −5.2 V max A
Positive Input Voltage
(5)
3.2 3.1 3.0 2.9 V min A
Common-Mode Rejection Ratio (CMRR) Input-Referred 80 76 74 72 dB min A
Input Impedance
Differential Mode 10 2.1 kΩ pF typ C
Common-Mode 400 1.2 kΩ pF typ C
OUTPUT
Output Voltage Swing G = +2, R
L
= 1kΩ to GND ±4.88 ±4.86 ±4.85 ±4.84 V min A
G = +2, R
L
= 150Ω to GND ±4.64 ±4.60 ±4.58 ±4.56 V min A
Current Output, Sinking and Sourcing ±85 ±65 ±60 ±55 mA min A
Short-Circuit Current Output Shorted to Ground 150 mA typ C
Closed-Loop Output Impedance G = +2, f ≤ 100kHz 0.06 Ω typ C
POWER SUPPLY
Minimum Operating Voltage ±1.4 V typ C
Maximum Operating Voltage ±5.5 ±5.5 ±5.5 V max A
Maximum Quiescent Current V
S
= ±5V 4.25 4.7 5.3 5.9 mA max A
Minimum Quiescent Current V
S
= ±5V 4.25 4.0 3.6 3.3 mA min A
Power-Supply Rejection Ratio (+PSRR) Input-Referred 66 61 60 59 dB min A
THERMAL CHARACTERISTICS
Specification: ID, IDBV −40 to +85 °C typ C
Thermal Resistance, q
JA
D SO-8 125 °C/W typ C
DBV SOT23-5 150 °C/W typ C
(1)
Junction temperature = ambient for +25°C specifications.
(2)
Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over temperature specifications.
(3)
Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical
value only for information.
(4)
Current is considered positive out of pin.
(5)
Tested < 3dB below minimum specified CMRR at ± CMIR limits.