Datasheet

OPA699
5
SBOS261D
www.ti.com
AC PERFORMANCE (see Figure 2)
Small Signal Bandwidth (V
O
< 0.5V
PP
) G = [phone] MHz min B
G = +12 83 MHz typ C
G = –6 242 MHz typ C
Gain Bandwidth Product (G ≥ +20) V
O
< 0.5V
PP
880 700 650 600 MHz min B
Gain Peaking V
O
< 0.5V
PP
, G = +4 8 dB typ C
0.1dB Gain Flatness Bandwidth V
O
< 0.5V
PP
, G = +6 30 MHz typ C
Large-Signal Bandwidth V
O
= 2V
PP
250 200 190 180 MHz min B
Step Response
Slew Rate 2V Step 1050 850 800 700 V/µsminB
Rise-and-Fall Time 0.5V Step 1.75 1.8 1.9 2.1 ns max B
Settling Time: 0.05% 2V Step 8 ns typ C
Spurious-Free Dynamic Range, Even f = 5MHz, V
O
= 2V
PP
64 61 60 58 dB min B
Odd f = 5MHz, V
O
= 2V
PP
70 69 67 65 dB min B
Input Noise
Voltage Noise Density f ≥ 1MHz 4.2 4.6 5.2 5.6 nV/√Hz max B
Current Noise Density f ≥ 1MHz 2.1 2.6 2.8 3.0 pA/√Hz max B
DC PERFORMANCE
Open-Loop Voltage Gain (A
OL
)V
O
= V
CM
± 0.5V 66 56 54 53 dB min A
Input Offset Voltage ±2
±6 ±7 ±8mVmaxA
Average Drift — ±14 ±14 µV/°CmaxB
Input Bias Current
(4)
+3 ±10 ±11 ±12 µAmaxA
Average Drift — ±25 ±25 nA/°CmaxB
Input Offset Current ±0.4
±2 ±2.5 ±3 µAmaxA
Average Drift — ±15 ±15 nA/°CmaxB
INPUT
Common-Mode Rejection Ratio Input Referred, V
CM
±0.5V 58 54 53 52 dB min A
Common-Mode Input Range
(5)
V
CM
±0.8 V
CM
±0.7 V
CM
±0.7 V
CM
±0.6 V min A
Input Impedance MΩ || pF typ C
Differential-Mode 0.32 || 1
Common-Mode 3.5 || 1 MΩ || pF typ C
OUTPUT V
H
= V
CM
+ 1.8V, V
L
= V
CM
– 1.8V
Output Voltage Range R
L
≥ 500Ω V
CM
±1.6 V
CM
±1.4 V
CM
±1.4 V
CM
±1.3 V min A
Current Output, Sourcing +70 +60 +55 +50 mA min A
Sinking –70 –60 –55 –50 mA min A
Closed-Loop Output Impedance G = +4, f < 100kHz 0.2 Ω typ C
POWER SUPPLY
Operating Voltage, Specified 5 V typ C
Maximum — +12 +12 +12 V max A
Quiescent Current, Maximum V
S
= +5V 14.3 14.9 15.1 15.3 mA max A
Minimum V
S
= +5V 14.3 13.6 13.4 13.2 mA min A
Power-Supply Rejection Ratio V
S
= 4.5V to 5.5V
+PSRR (Input Referred) 70 dB typ C
OPA699ID
0 ° C to –40 ° C to MIN/ TEST
PARAMETER CONDITIONS +25°C +25°C
(1)
70°C
(2)
+85°C
(2)
UNITS MAX LEVEL
(3)
ELECTRICAL CHARACTERISTICS: V
S
= +5V
Boldface limits are tested at +25°C.
G = +6, R
F
= 750Ω, R
L
= 500Ω tied to V
CM
= +2.5V, V
L
= V
CM
–1.2V, and V
H
= V
CM
+1.2V, (see Figure 2 for AC performance only), unless otherwise noted.
TYP MIN/MAX OVER TEMPERATURE
NOTES: (1) Junction temperature = ambient temperature for low temperature limit and +25°C Test Level A specifications. Junction temperature = ambient
temperature +23°C at high temperature limit Test Level A specifications.
(2) Junction temperature = ambient at low temperature limit; junction temperature = ambient +1°C at high temperature limit for over-temperature
tested specifications.
(3) Test Levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value for information only.
(4) Current is considered positive out of node.
(5) CMIR tested as < 3dB degradation from minimum CMRR at specified limits.
(6) I
VH
(V
H
bias current) is negative, and I
VL
(V
L
bias current) is positive, under these conditions. See Note 3 and Figures 2 and 12.
(7) Limiter feedthrough is the ratio of the output magnitude to the sinewave added to V
H
(or V
L
) when V
IN
= 0.
(8) V
H
slew rate conditions are: V
IN
= V
CM
+0.4V, G = +6, V
L
= V
CM
–1.2V, V
H
= step between V
CM
+1.2V and V
CM
. V
L
slew rate conditions are similar.
(9) Linearity Guardband is defined for an output sinusoid (f = 5MHz, V
O
= V
CM
±1V
PP
) centered between the limiter levels (V
H
and V
L
). It is the
difference between the limiter level and the peak output voltage where SFDR decreases by 3dB (see Figure 8).