Datasheet

OPA693
3
SBOS285A
www.ti.com
ELECTRICAL CHARACTERISTICS: V
S
= ±5V
Boldface limits are tested at 25°C.
G = +2 (–IN grounded) and R
L
= 100Ω (see Figure 1 for AC performance only), unless otherwise noted.
OPA693ID, IDBV
TYP MIN/MAX OVER TEMPERATURE
(1)
0 ° C to –40 ° C to MIN/ TEST
PARAMETER CONDITIONS +25°C +25°C70°C +85°C UNITS MAX LEVEL
(2 )
AC PERFORMANCE (see Figure 1)
Small-Signal Bandwidth (V
O
< 1.0V
PP
) G = +1 1400 MHz typ C
G = [phone] MHz min B
G = –1 700 510 490 480 MHz typ C
Bandwidth for 0.2dB Gain Flatness G = +2, V
O
< 1.0V
PP
, R
L
= 150Ω 400 122 112 108 MHz min B
Peaking at a Gain of +1 V
O
< 1.0V
PP
2.5 3.8 4.8 5.2 dB max B
Large-Signal Bandwidth G = +2, V
O
= 4V
PP
400 MHz typ C
Slew Rate G = +2, 4V Step 2500 2200 2100 2000 V/µsminB
Rise-and-Fall Time G = +2, V
O
= 0.5V Step 0.6 0.8 0.8 0.8 ns max B
G = +2, V
O
= 5V Step 1.2 1.3 1.3 1.4 ns max B
Settling Time to 0.02% G = +2, V
O
= 2V Step 16 ns typ C
Settling Time to 0.1% G = +2, V
O
= 2V Step 12 ns typ C
Harmonic Distortion G = +2, f = 10MHz, V
O
= 2V
PP
2nd-Harmonic R
L
= 100Ω –69 –66 –65 –64 dBc max B
R
L
≥ 500Ω –82 –80 –79 –78 dBc max B
3rd-Harmonic R
L
= 100Ω –83 –80 –70 –69 dBc max B
R
L
≥ 500Ω –96 –86 –85 –82 dBc max B
Input Voltage Noise f > 1MHz 1.8 2 2.7 2.9 nV/√Hz max B
Noninverting Input Current Noise f > 1MHz 18 19 21 22 pA/√Hz max B
Inverting Input Current Noise (internal) f > 1MHz 22 24 26 27 pA/√Hz max B
Differential Gain NTSC, R
L
= 150Ω 0.03 % typ C
NTSC, R
L
= 37.5Ω 0.03 % typ C
Differential Phase NTSC, R
L
= 150Ω 0.01 deg typ C
NTSC, R
L
= 37.5Ω 0.1 deg typ C
DC PERFORMANCE
(3)
Gain Error G = +1 ±0.2 % typ C
G = +2 ±0.3
±0.9 ±1.0 ±1.1 % max A
G = –1, R
S
= 0Ω±0.2 ±0.8 ±0.9 ±1.0 % max B
DC Linearity V
O
= ±2, R
L
= 100Ω, G = +2 0.0016 % typ C
Internal R
F
and R
G
Maximum 300 341 345 346 Ω max A
Minimum 300 264 260 259 Ω min A
Average Drift 0.03 0.03 %/C° max B
Input Offset Voltage V
CM
= 0V ±0.3 ±2.0 ±2.3 ±2.5 mV max A
Average Offset Voltage Drift V
CM
= 0V ±5 ±8 µV/°CmaxB
Noninverting Input Bias Current V
CM
= 0V +15 ±35 ±43 ±45 µAmaxA
Average Noninverting Input Bias Current Drift V
CM
= 0V 170 170 nA/°CmaxB
Inverting Input Bias Current (internal) V
CM
= 0V ±20 ±50 ±52 ±54 µAmaxA
Average Inverting Input Bias Current Drift V
CM
= 0V 50 60 nA°CmaxB
INPUT
Common-Mode Input Range ±3.4
±3.3 ±3.2 ±3.2 V min B
Noninverting Input Impedance 300 || 1.2 kΩ || pF typ C
OUTPUT
Voltage Output Swing No Load ±4.1
±3.9 ±3.9 ±3.8 V min A
100Ω Load ±3.8
±3.7 ±3.7 ±3.6 V min A
Current Output, Sourcing +120 +90 +80 +70 mA min A
Current Output, Sinking –120 –90 –80 –70 mA min A
Closed-Loop Output Impedance G = +2, f = 100kHz 0.18 Ω typ C
(1) Junction temperature = ambient temperature for low temperature limit and +25°C specifications. Junction temperature = ambient temperature +20°C at high
temperature limit specifications.
(2) Test Levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation.
(B) Limits set by characterization and simulation.
(C) Typical value only for information.
(3) Current is considered positive out-of-node. V
CM
is the input common-mode voltage.