Datasheet
ELECTRICAL CHARACTERISTICS: V
S
= ± 6V
OPA659
www.ti.com
............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009
At R
F
= 0 Ω , G = +1V/V, and R
L
= 100 Ω , T
A
= +25 ° C, unless otherwise noted.
OPA659
TEST
PARAMETER CONDITIONS MIN TYP MAX UNIT LEVEL
(1)
AC PERFORMANCE
Small-Signal Bandwidth V
O
= 200mV
PP
, G = +1V/V 650 MHz C
V
O
= 200mV
PP
, G = +2V/V 335 MHz C
V
O
= 200mV
PP
, G = +5V/V 75 MHz C
V
O
= 200mV
PP
, G = +10V/V 35 MHz C
Gain Bandwidth Product G > +10V/V 350 MHz C
Bandwidth for 0.1dB Flatness G = +2V/V, V
O
= 2V
PP
55 MHz C
Large-Signal Bandwidth V
O
= 2V
PP
, G = +1V/V 575 MHz B
Slew Rate V
O
= 4V Step, G = +1V/V 2550 V/ µ s B
Rise and Fall Time V
O
= 4V Step, G = +1V/V 1.3 ns C
Settling Time to 1% V
O
= 4V Step, G = +1V/V 8 ns C
Pulse Response Overshoot V
O
= 4V Step, G = +1V/V 12 % C
Harmonic Distortion V
O
= 2V
PP
, G = +1V/V, f = 10MHz
2nd harmonic – 79 dBc C
3rd harmonic – 100 dBc C
V
O
= 2V
PP
Envelope (each tone 1V
PP
),
Intermodulation Distortion
G = +2V/V, f
1
= 10MHz, f
2
= 11MHz
2nd intermodulation – 72 dBc C
3rd intermodulation – 96 dBc C
Input Voltage Noise f > 100kHz 8.9 nV/ √ Hz C
Input Current Noise f < 10MHz 1.8 fA/ √ Hz C
DC PERFORMANCE
Open-Loop Voltage Gain (A
OL
) T
A
= +25 ° C, V
CM
= 0V, R
L
= 100 Ω 52 58 dB A
T
A
= – 40 ° C to +85 ° C, V
CM
= 0V, R
L
= 100 Ω 49 55 dB B
Input Offset Voltage T
A
= +25 ° C, V
CM
= 0V ± 1 ± 5 mV A
T
A
= – 40 ° C to +85 ° C, V
CM
= 0V,
± 1.5 ± 7.6 mV B
DRB package
T
A
= – 40 ° C to +85 ° C, V
CM
= 0V,
± 1.5 ± 8.9 mV B
DBV package
T
A
= – 40 ° C to +85 ° C, V
CM
= 0V,
Average offset voltage drift
(2)
± 10 ± 40 µ V/ ° C B
DRB package
T
A
= – 40 ° C to +85 ° C, V
CM
= 0V,
± 10 ± 60 µ V/ ° C B
DBV package
Input Bias Current T
A
= +25 ° C, V
CM
= 0V ± 10 ± 50 pA A
T
A
= 0 ° C to +70 ° C, V
CM
= 0V ± 240 ± 1200 pA B
T
A
= – 40 ° C to +85 ° C, V
CM
= 0V ± 640 ± 3200 pA B
T
A
= 0 ° C to +70 ° C, V
CM
= 0V ± 5 ± 26 pA/ ° C B
Average input bias current drift
T
A
= – 40 ° C to +85 ° C, V
CM
= 0V ± 7 ± 34 pA/ ° C B
Input Offset Current T
A
= +25 ° C, V
CM
= 0V ± 5 ± 25 pA A
T
A
= 0 ° C to +70 ° C, V
CM
= 0V ± 120 ± 600 pA B
T
A
= – 40 ° C to +85 ° C, V
CM
= 0V ± 320 ± 1600 pA B
(1) Test levels: (A) 100% tested at +25 ° C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) DRB package only.
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