Datasheet

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SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004
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6
TYPICAL CHARACTERISTICS: V
S
= +2.7V to +5.5V (continued)
All specifications at T
A
= +25°C, R
L
= 10kΩ connected to V
S
/2, and V
OUT
= V
S
/2, unless otherwise noted.
C
F
Circuit for Transimpedance Amplifier Characteristic curves on this page.
R
F
C
DIODE
OPA381
C
STRAY
TRANSIMPEDANCE AMP CHARACTERISTIC
100
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
1k 10k 100k 1M 10M 100M
Frequency (Hz)
Transimpedance Gain (V/A in dB)
R
F
=10MΩ
C
DIODE
= 100pF
C
F
= 0.5pF
R
F
=1M
Ω
C
F
=1pF
R
F
= 100kΩ
C
F
= 4pF
R
F
=10kΩ
C
F
=12pF
C
STRAY
(parasitic) = 0.2pF
TRANSIMPEDANCE AMP CHARACTERISTIC
100
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
1k 10k 100k 1M 10M 100M
Frequency (Hz)
Transimpedance Gain (V/A in dB)
R
F
=10MΩ
C
DIODE
= 50pF
R
F
=1M
Ω
C
F
=1pF
R
F
= 100kΩ
C
F
= 3pF
R
F
=10kΩ
C
F
=8pF
C
STRAY
(parasitic) = 0.2pF
TRANSIMPEDANCE AMP CHARACTERISTIC
100 1k 10k 100k 1M 10M 100M
Frequency (Hz)
Transimpedance Gain (V/A in dB)
150
140
130
120
11 0
100
90
80
70
60
50
40
30
20
10
C
STRAY
(parasitic) = 0.2pF
C
DIODE
= 20pF
R
F
= 10M
Ω
R
F
=1M
Ω
C
F
=0.5pF
R
F
=100k
Ω
C
F
=2pF
R
F
= 10k
Ω
C
F
=5pF
TRANSIMPEDANCE AMP CHARACTERISTIC
100 1k 10k 100k 1M 10M 100M
Frequency (Hz)
Transimpedance Gain (V/A in dB)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
C
DIODE
= 10pF
C
STRAY
(parasitic) = 0.2pF
R
F
= 10M
Ω
R
F
=1M
Ω
C
F
=0.5pF
R
F
=100k
Ω
C
F
=2pF
R
F
= 10k
Ω
C
F
=4pF
TRANSIMPEDANCE AMP CHARACTERISTIC
100 1k 10k 100k 1M 10M 100M
Frequency (Hz)
Transimpedance Gain (V/A in dB)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
C
STRAY
(parasitic) = 0.2pF
C
DIODE
=1pF
R
F
= 10M
Ω
R
F
=1M
Ω
R
F
=100k
Ω
R
F
= 10k
Ω
C
F
= 0.5pF
C
F
= 2pF