Datasheet

R
F
Op-Amp
Core
R
I
R
L
V
(1)
IN
I
D
-In
Out
+In
ESDCurrent-
SteeringDiodes
Edge-TriggeredESD
AbsorptionCircuit
+V
S
+V
-V
-V
S
OPA378
ESD
ESD
ESD
ESD
V+
V-
OPA378
OPA2378
SBOS417D –JANUARY 2008–REVISED OCTOBER 2009 www.ti.com
ELECTRICAL OVERSTRESS It is helpful to have a good understanding of this
basic ESD circuitry and its relevance to an electrical
Designers often ask questions about the capability of
overstress event. Figure 30 shows the ESD circuits
an operational amplifier to withstand electrical
contained in the OPA378 (indicated by the dashed
overstress. These questions tend to focus on the
line area). The ESD protection circuitry involves
device inputs, but may involve the supply voltage pins
several current-steering diodes connected from the
or even the output pin. Each of these different pin
input and output pins and routed back to the internal
functions have electrical stress limits determined by
power-supply lines, where they meet at an absorption
the voltage breakdown characteristics of the
device internal to the operational amplifier. This
particular semiconductor fabrication process and
protection circuitry is intended to remain inactive
specific circuits connected to the pin. Additionally,
during normal circuit operation.
internal electrostatic discharge (ESD) protection is
built into these circuits to protect them from
accidental ESD events both before and during
product assembly.
(1) V
IN
= +V
S
+ 500mV.
Figure 30. Equivalent Internal ESD Circuitry and Its Relation to a Typical Circuit Application
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