Datasheet

OPA3692
SBOS228E
4
www.ti.com
OPA3692ID, OPA3692IDBQ
TYP MIN/MAX OVER TEMPERATURE
(1)
0°C to –40°C to MIN/ TEST
PARAMETER CONDITIONS +25°C +25°C70°C +85°C UNITS MAX LEVEL
(2 )
AC PERFORMANCE (see Figure 2)
Small-Signal Bandwidth (V
O
< 0.5V
PP
) G = +1 240 MHz typ C
G = [phone] MHz min B
G = –1 195 MHz typ C
Bandwidth for 0.1dB Gain Flatness G = +2, V
O
< 0.5V
PP
90 40 30 25 MHz min B
Peaking at a Gain of +1 V
O
< 0.5V
PP
0.2 1 2.5 3 dB max B
Large-Signal Bandwidth G = +2, V
O
= 2V
PP
210 MHz typ C
Slew Rate G = +2, 2V Step 830 600 575 550 V/µsmin B
Rise-and-Fall Time G = +2, V
O
= 0.5V Step 2.0 ns typ C
G = +2, V
O
= 2V Step 2.3 ns typ C
Settling Time to 0.02% G = +2, V
O
= 2V Step 14 ns typ C
0.1% G = +2, V
O
= 2V Step 10 ns typ C
Harmonic Distortion G = +2, f = 5MHz, V
O
= 2V
PP
2nd-Harmonic R
L
= 100Ω to V
S
/2 –66 –58 –57 –56 dBc max B
R
L
≥ 500Ω to V
S
/2 –73 –65 –63 –62 dBc max B
3rd-Harmonic R
L
= 100Ω to V
S
/2 –72 –68 –67 –65 dBc max B
R
L
≥ 500Ω to V
S
/2 –77 –72 –70 –69 dBc max B
Input Voltage Noise f > 1MHz 1.7 2.5 2.9 3.1 nV/
√Hz
max B
Noninverting Input Current Noise f > 1MHz 12 14 15 15 pA/
√Hz
max B
Inverting Input Current Noise f > 1MHz 15 17 18 19 pA/
√Hz
max B
DC PERFORMANCE
(3)
Gain Error G = +1 ±0.2 % typ C
G = +2 ±0.3 ±1.5 ±1.6 ±1.7 % max A
G = –1 ±0.2 ±1.5 ±1.6 ±1.7 % max B
Internal R
F
and R
G
Minimum 402 457 462 464 Ω min B
Maximum 402 347 342 340 Ω max B
Average Drift 0.13 0.13 0.13 %/°Cmax B
Input Offset Voltage V
CM
= 2.5V ±0.8 ±3.5 ±4.1 ±4.8 mV max A
Average Offset Voltage Drift V
CM
= 2.5V ±12 ±20 µV/°Cmax B
Noninverting Input Bias Current V
CM
= 2.5V +20 +40 +46 +56 µAmaxA
Average Noninverting Input Bias Current Drift V
CM
= 2.5V –250 –250 nA/°Cmax B
Inverting Input Bias Current V
CM
= 2.5V ±5 ±20 ±25 ±35 µAmaxA
Average Inverting Input Bias Current Drift V
CM
= 2.5V ±112 ±200 nA°Cmax B
INPUT
Least Positive Input Voltage 1.5 1.6 1.7 1.8 V max B
Most Positive Input Voltage 3.5 3.4 3.3 3.2 V min B
Noninverting Input Impedance 100 || 2 kΩ || pF typ C
OUTPUT
Most Positive Output Voltage No Load 4.0 3.8 3.7 3.5 V min A
R
L
= 100Ω 3.9 3.7 3.6 3.4 V min A
Least Positive Output Voltage No Load 1.0 1.2 1.3 1.5 V max A
R
L
= 100Ω 1.1 1.3 1.4 1.6 V max A
Current Output, Sourcing +160 +120 +100 +80 mA min A
Sinking –160 –120 –100 –80 mA min A
Short-Circuit Current ±250 mA typ C
Output Impedance G = +2, f = 100kHz 0.12 Ω typ C
DISABLE/POWER DOWN (DIS Pin)
Power-Down Supply Current (+V
S
)V
DIS
= 0, All Channels –450 –900 –1050 –1200 µAmaxA
Off Isolation G = +2, 5MHz 65 dB typ C
Output Capacitance in Disable 4 pF typ C
Turn-On Glitch G = +2, R
L
= 150Ω, V
IN
= 2.5V ±50 mV typ B
Turn-Off Glitch G = +2, R
L
= 150Ω, V
IN
= 2.5V ±20 mV typ B
Enable Voltage 3.3 3.5 3.6 3.7 V min A
Disable Voltage 1.8 1.7 1.6 1.5 V max A
Control Pin Input Bias Current (DIS) V
DIS
= 0, Each Channel 75 130 150 160 µA typ C
POWER SUPPLY
Specified Single-Supply Operating Voltage 5 V typ C
Maximum Single-Supply Operating Voltage 12 12 12 V max A
Maximum Quiescent Current (3 Channels) V
S
= +5V 13.5 14.4 15.3 15.9 mA max A
Minimum Quiescent Current (3 Channels) V
S
= +5V 13.5 12.3 11.4 11.0 mA min A
Power-Supply Rejection Ratio (+PSRR) Input Referred 62 dB typ C
TEMPERATURE RANGE
Specification: D, DBQ
–40 to +85 °C typ C
Thermal Resistance,
θ
JA
D SO-16 100 °C/W typ C
DBQ SSOP-16 100 °C/W typ C
NOTES: (1) Junction temperature = ambient temperature for low temperature limit and +25°C specifications. Junction temperature = ambient temperature +15°C at
high temperature limit specifications. (2) Test Levels: (A) 100% tested at +25°C. Over-temperature limits by characterization and simulation. (B) Limits set by
characterization and simulation. (C) Typical value only for information. (3) Current is considered positive out-of-node. V
CM
is the input common-mode voltage.
ELECTRICAL CHARACTERISTICS: V
S
= +5V
Boldface limits are tested at +25°C.
G = +2 (–IN grounded though 0.1µF) and R
L
= 100Ω to V
S
/2 (see Figure 2 for AC performance only), unless otherwise noted.