Datasheet

ELECTRICAL CHARACTERISTICS: V
S
= ± 5V
OPA2695
www.ti.com ...................................................................................................................................................... SBOS354A – APRIL 2008 – REVISED AUGUST 2008
Boldface limits are tested at +25 ° C.
At R
F
= 402 Ω , R
L
= 100 Ω , and G = +8V/V, unless otherwise noted.
OPA2695ID, IRGT
TYP MIN/MAX OVER TEMPERATURE
0 ° C to – 40 ° C to MIN/ TEST
PARAMETER CONDITIONS +25 ° C +25 ° C
(2)
70 ° C
(3)
+85 ° C
(3)
UNITS MAX LEVEL
(1)
AC PERFORMANCE (see Figure 68 )
Small-signal bandwidth (V
O
= 0.2V
PP
) G = +1V/V, R
F
= 523 Ω 1100 MHz typ C
G = +2V/V, R
F
= 511 Ω 850 MHz typ C
G = +8V/V, R
F
= 402 Ω 450 400 380 350 MHz min B
G = +16V/V, R
F
= 249 Ω 350 MHz typ C
Bandwidth for 0.2dB gain flatness G = +2V/V, V
O
= 0.2V
PP
, R
F
= 511 Ω 300 MHz min B
Peaking at a gain of +1 R
F
= 523 Ω , V
O
= 0.2V
PP
4.6 5.4 5.8 6.0 dB max B
Large-signal bandwidth G = +8V/V, R
F
= 402 Ω , V
O
= 4V
PP
400 MHz typ C
Slew rate G = -8V/V, V
O
= 4V step 2500 2000 1900 1800 V/ µ s min B
G = +8V/V, V
O
= 4V step 2900 2600 2500 2400 V/ µ s min B
Rise-and-fall time G = +8V/V, V
O
= 1V step 0.8 ns typ C
G = +8V/V, V
O
= 4V step 1.0 ns typ C
Settling time to 0.02% G = +8V/V, V
O
= 2V step 16 ns typ C
Settling time to 0.1% G = +8V/V, V
O
= 2V step 10 ns typ C
Harmonic distortion G = +8V/V, f = 10MHz, V
O
= 2V
PP
2nd harmonic R
L
= 100 Ω – 73 – 62 – 60 – 59 dBc max B
R
L
≥ 500 Ω – 78 – 76 – 74 – 73 dBc max B
3rd harmonic R
L
= 100 Ω – 82 – 80 – 75 – 72 dBc max B
R
L
≥ 500 Ω – 81 – 80 – 79 – 78 dBc max B
Input voltage noise f > 1MHz 1.8 2 2.7 2.9 nV/ √ Hz max B
Noninverting input current noise f > 1MHz 18 19 21 22 pA/ √ Hz max B
Inverting input current noise f > 1MHz 22 24 26 27 pA/ √ Hz max B
G = +2V/V, NTSC, V
O
= 1.4V
PP
,
Differential gain – 0.01 % typ C
R
L
= 150 Ω
G = +2V/V, NTSC, V
O
= 1.4V
PP
,
Differential phase -0.05 ° typ C
R
L
= 150 Ω
Crosstalk f ≤ 10MHz – 50 dB typ C
DC PERFORMANCE
(4)
Open-loop transimpedance gain (Z
OL
) V
O
= 0V, R
L
= 100 Ω 85 45 43 41 k Ω min A
Input offset voltage V
CM
= 0V ± 0.3 ± 3.5 ± 4.0 ± 4.5 mV max A
Average offset voltage drift V
CM
= 0V ± 10 ± 15 µ V/ ° C max B
Noninverting input bias current V
CM
= 0V +13 ± 30 ± 37 ± 41 µ A max A
Average noninverting input bias current drift V
CM
= 0V +150 +180 nA/ ° C max B
Inverting input bias current V
CM
= 0V ± 20 ± 60 ± 66 ± 70 µ A max A
Average inverting input bias current drift V
CM
= 0V ± 120 ± 160 nA/ ° C max B
INPUT
Common-mode input voltage range (CMIR)
(5)
± 3.3 ± 3.1 ± 3.0 ± 3.0 V min A
Common-mode rejection ratio (CMRR) V
CM
= 0V 56 51 50 50 dB min A
Noninverting input Impedance 280 || 1.2 k Ω || pF typ C
Inverting input resistance (R
I
) Open-loop 29 Ω typ C
OUTPUT
Voltage output swing No load ± 4.1 ± 3.9 ± 3.9 ± 3.9 V min A
100 Ω load ± 3.9 ± 3.7 ± 3.7 ± 3.6 V min A
Current output, sourcing V
O
= 0 +120 +90 +80 +70 mA min A
Current output, sinking V
O
= 0 – 120 – 90 – 80 – 70 mA min A
Closed-loop output impedance G = +8V/V, f = 100kHz 0.04 Ω typ C
(1) Test levels: (A) 100% tested at +25 ° C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25 ° C specifications.
(3) Junction temperature = ambient at low temperature limits; junction temperature = ambient +26 ° C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of pin.
(5) Tested < 3dB below minimum specified CMRR at ± CMIR limits.
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