Datasheet

40
35
30
25
20
15
10
5
0
Overshoot (%)
0 100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
Device
R =
I
10 kW
R
OUT
C
L
R
F
= 10 kW
+18 V
-18 V
G = 1-
R = 0 W
OUT
R = 25 W
OUT
R = 50 W
OUT
R = 10 kW
L
Time(100 s/div)m
5V/div
+18V
-18V
37V
PP
SineWave
( 18.5V)±
Device
V
IN
V
OUT
10k
1k
100
10
1
1m
Z ( )W
O
1 10 100 1k 10k 10M
Frequency(Hz)
100k 1M
40
35
30
25
20
15
10
5
0
Overshoot (%)
0 100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
+18 V
-18 V
R
OUT
C
L
Device
R
L
G = +1
R = 0 W
OUT
R = 25 W
OUT
R = 50 W
OUT
R = kW
L
10
3
2.5
2
1.5
1
0.5
0
A ( V/V)m
OL
-55 -35 -15 5 25 125
Temperature( C)°
45 1058565
V =4V,R =10kW
SUPPLY L
V =36V,R =10kW
SUPPLY L
10 100 1k 10k 100k 1M 10M 100M
−20
0
20
40
60
80
100
120
140
0
45
90
135
180
Frequency (Hz)
Gain (dB)
Phase (°)
Gain
Phase
G007
OPA2180
OPA4180
SBOS584C –NOVEMBER 2011–REVISED DECEMBER 2012 www.ti.com
TYPICAL CHARACTERISTICS (continued)
V
S
= ±18 V, V
CM
= V
S
/2, R
LOAD
= 10 kΩ connected to V
S
/2, and C
L
= 100 pF, unless otherwise noted.
OPEN-LOOP GAIN AND PHASE vs FREQUENCY OPEN-LOOP GAIN vs TEMPERATURE
Figure 7. Figure 8.
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY (100-mV Output Step)
Figure 9. Figure 10.
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
(100-mV Output Step) NO PHASE REVERSAL
Figure 11. Figure 12.
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