Datasheet

OPA1S2384
OPA1S2385
SBOS645A –DECEMBER 2012–REVISED JUNE 2013 www.ti.com
ELECTRICAL CHARACTERISTICS: Amplifier Section, V
SS
= +2.7 V to +5.5 V
(1)(2)
(continued)
At T
A
= +25°C, R
L
= 1 kΩ connected to V
S
/ 2, and V
O
= V
CM
= V
S
/ 2, unless otherwise noted.
OPA1S238x
PARAMETER CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
V
S
Operating supply range 2.7 5.5 V
I
Q
Quiescent current (per amplifier) V
S
= 5.5 V, I
O
= 0 mA 9.2 12 mA
TEMPERATURE
Specified range –40 +85 °C
Operating range –40 +125 °C
Storage range –65 +150 °C
ELECTRICAL CHARACTERISTICS: Switch Section
(1)
At T
A
= +25°C and V
S
= 3.3 V, unless otherwise noted.
OPA1S238x
PARAMETER CONDITIONS MIN TYP MAX UNIT
DC
Analog voltage range V
S
= 2.7 V to 5.5 V 0 V+ V
R
on
On-state resistance V
IN
= V+ / 2, I
COM
= 10 mA 4 16 Ω
I
lkg
Off-state leakage current V
IN
= V+ / 2, V
+IN B
= 0 V –0.5 0.01 0.5 nA
DYNAMIC
t
ON
Turn-on time V
IN
= V+ / 2, C
L
= 35 pF, R
L
= 300 Ω 20 ns
t
OFF
Turn-off time V
IN
= V+ / 2, C
L
= 35 pF, R
L
= 300 Ω 15 ns
Q
C
Charge injection C
L
= 1 nF, V
BIAS
= 4 V 1 pC
BW Bandwidth Signal = 0 dBm (0.632 mV
PP
, 50 Ω) 450 MHz
Off isolation f = 1 MHz, signal = 1 Vrms, 50 Ω –82 dB
Off capacitance (IN_S) Switch open, f = 1 MHz, V
BIAS
= 0 V 6.5 pF
Off capacitance (+IN_B) Switch open, f = 1 MHz, V
BIAS
= 0 V 8.5 pF
On capacitance (IN_S) Switch closed, f = 1 MHz, V
BIAS
= 0 V 13 pF
On capacitance (+IN_B) Switch closed, f = 1 MHz, V
BIAS
= 0 V 15 pF
DIGITAL CONTROL INPUT (SC pin)
V
S
= 5.5 V, T
A
= –40°C to +85°C 2.4 V
S+
V
V
IH
High-level input voltage
V
S
= 3.3 V, T
A
= –40°C to +85°C 2.0 V
S+
V
V
IL
Low-level input voltage 0 0.9 V
V
IN S
= V+ or 0 V –0.5 0.01 0.5 µA
I
lkg(SC)
Input leakage current
T
A
= –40°C to +85°C –5 5 µA
Input capacitance 3 pF
(1) Parameters with MIN and MAX specification limits are 100% production tested at +25ºC, unless otherwise noted. Over temperature
limits are based on characterization and statistical analysis.
THERMAL INFORMATION
OPA1S238x
THERMAL METRIC
(1)
DRC (SON) UNITS
10 PINS
θ
JA
Junction-to-ambient thermal resistance 46.2
θ
JCtop
Junction-to-case (top) thermal resistance 53.8
θ
JB
Junction-to-board thermal resistance 21.7
°C/W
ψ
JT
Junction-to-top characterization parameter 1.1
ψ
JB
Junction-to-board characterization parameter 21.9
θ
JCbot
Junction-to-case (bottom) thermal resistance 6.1
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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