Datasheet

4OPA111
®
DICE INFORMATION
OPA111AD DIE TOPOGRAPHY
PAD FUNCTION
1 Offset Trim
2 –In
3 +In
4–V
S
5 Offset Trim
6 Output
7+V
S
8 Substrate
Substrate Bias: This Dielectrically-Isolated
Substrate is normally connected to common.
MECHANICAL INFORMATION
MILS (0.001") MILLIMETERS
Die Size 95 x 71 ±5 2.41 x 1.80 ±0.13
Die Thickness 20 ±3 0.51 ±0.08
Min. Pad Size 4 x 4 0.10 x 0.10
Backing: None
Transistor Count: 44
TYPICAL PERFORMANCE CURVES
T
A
= +25°C, V
CC
= ±15VDC unless otherwise noted.
INPUT CURRENT NOISE SPECTRAL DENSITY
1k
Frequency (Hz)
100101 10k 100k 1M
100
10
1
0.1
Current Noise (fA/√Hz
BM
INPUT VOLTAGE NOISE SPECTRAL DENSITY
1k
Frequency (Hz)
10k 100k 1M100101
1k
100
10
1
Voltage Noise (nV/ Hz)
BM
AM, SM