Datasheet

MSP430G22x0
www.ti.com SLAS753E –JANUARY 2012–REVISED FEBRUARY 2013
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST
V
CC
MIN TYP MAX UNIT
CONDITIONS
V
CC(PGM/ERASE)
Program and erase supply voltage 2.2 3.6 V
f
FTG
Flash timing generator frequency 257 476 kHz
I
PGM
Supply current from V
CC
during program 2.2 V, 3.6 V 1 5 mA
I
ERASE
Supply current from V
CC
during erase 2.2 V, 3.6 V 1 7 mA
t
CPT
Cumulative program time
(1)
2.2 V, 3.6 V 10 ms
t
CMErase
Cumulative mass erase time 2.2 V, 3.6 V 20 ms
Program and erase endurance 10
4
10
5
cycles
t
Retention
Data retention duration T
J
= 25°C 100 years
t
Word
Word or byte program time
(2)
30 t
FTG
t
Block, 0
Block program time for first byte or word
(2)
25 t
FTG
Block program time for each additional byte or
t
Block, 1-63
(2)
18 t
FTG
word
t
Block, End
Block program end-sequence wait time
(2)
6 t
FTG
t
Mass Erase
Mass erase time
(2)
10593 t
FTG
t
Seg Erase
Segment erase time
(2)
4819 t
FTG
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word or byte write and block write modes.
(2) These values are hardwired into the Flash Controller's state machine (t
FTG
= 1/f
FTG
).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
V
(RAMh)
RAM retention supply voltage
(1)
CPU halted 1.6 V
(1) This parameter defines the minimum supply voltage V
CC
when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
Spy-Bi-Wire Interface
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER V
CC
MIN TYP MAX UNIT
f
SBW
Spy-Bi-Wire input frequency 2.2 V, 3 V 0 20 MHz
t
SBW,Low
Spy-Bi-Wire low clock pulse duration 2.2 V, 3 V 0.025 15 µs
Spy-Bi-Wire enable time
t
SBW,En
2.2 V, 3 V 1 µs
(TEST high to acceptance of first clock edge
(1)
)
t
SBW,Ret
Spy-Bi-Wire return to normal operation time 2.2 V, 3 V 15 100 µs
R
Internal
Internal pulldown resistance on TEST 2.2 V, 3 V 25 60 90 kΩ
(1) Tools accessing the Spy-Bi-Wire interface need to wait for the maximum t
SBW,En
time after pulling the TEST/SBWCLK pin high before
applying the first SBWCLK clock edge.
JTAG Fuse
(1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
V
CC(FB)
Supply voltage during fuse-blow condition T
A
= 25°C 2.5 V
V
FB
Voltage level on TEST for fuse blow 6 7 V
I
FB
Supply current into TEST during fuse blow 100 mA
t
FB
Time to blow fuse 1 ms
(1) After the fuse is blown, no further access to the JTAG/Test, Spy-Bi-Wire, and emulation feature is possible, and JTAG is switched to
bypass mode.
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