Datasheet

MSP430FW42x
SLAS383D –OCTOBER 2003–REVISED JANUARY 2011 www.ti.com
Scan IF, SIFCLK Oscillator
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS V
CC
MIN TYP MAX UNIT
AV
CC
= DV
CC
(connected together),
AV
CC
Analog supply voltage 2.2 3.6 V
AV
SS
= DV
SS
(connected together)
Scan IF oscillator operating 2.2 V 75
AI
CC
supply current into AV
CC
µA
3 V 90
terminal
SIFNOM = 0 1.8 3.2
Scan IF oscillator at minimum T
A
= 25ºC,
f
SIFCLKG
= 0 MHz
setting SIFCLKFQ = 0000
SIFNOM = 1 0.45 0.8
SIFNOM = 0 4
Scan IF oscillator at nominal T
A
= 25ºC,
f
SIFCLKG
= 8 MHz
setting SIFCLKFQ = 0000
SIFNOM = 1 1
SIFNOM = 0 4.48 6.8
Scan IF oscillator at maximum T
A
= 25ºC,
f
SIFCLKG
= 15 MHz
setting SIFCLKFQ = 0000
SIFNOM = 1 1.12 1.7
Settling time to full operation
t
on(SIFCLKG)
2.2 V/3 V 150 500 ns
after V
CC
is switched on
Frequency change per ±1
S
(SIFCLK)
S
(SIFCLK)
= f
(SIFCLKFQ + 1)
/ f
(SIFCLKFQ)
2.2 V/3 V 1.01 1.05 1.18 Hz/Hz
SIFCLKFQ(SIFCTL5) step
D
t
Temperature Coefficient SIFCLKFQ
(SIFCTL5)
= 8 2.2 V/3 V 0.35 %/_C
Frequency vs supply voltage
D
V
SIFCLKFQ
(SIFCTL5)
= 8 2.2 V/3 V 2 %/V
V
CC
variation
Flash Memory
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS V
CC
MIN TYP MAX UNIT
V
CC(PGM/ ERASE)
Program and erase supply voltage 2.7 3.6 V
f
FTG
Flash timing generator frequency 257 476 kHz
I
PGM
Supply current from DV
CC
during program 2.7 V/ 3.6 V 3 5 mA
I
ERASE
Supply current from DV
CC
during erase 2.7 V/ 3.6 V 3 7 mA
t
CPT
Cumulative program time
(1)
2.7 V/ 3.6 V 10 ms
t
CMErase
Cumulative mass erase time
(2)
2.7 V/ 3.6 V 20 ms
Program/Erase endurance 10
4
10
5
cycles
t
Retention
Data retention duration T
J
= 25°C 100 years
t
Word
Word or byte program time 35
t
Block, 0
Block program time for 1st byte or word 30
Block program time for each additional byte
t
Block, 1-63
21
or word
(3)
t
FTG
t
Block, End
Block program end-sequence wait time 6
t
Mass Erase
Mass erase time 5297
t
Seg Erase
Segment erase time 4819
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2) The mass erase duration generated by the flash timing generator is at least 11.1 ms ( = 5297 × (1 / f
FTG
,max) = 5297 x (1 / 476 kHz)).
To achieve the required cumulative mass erase time, the Flash Controller's mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
(3) These values are hardwired into the Flash Controller's state machine (t
FTG
= 1/f
FTG
).
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