Datasheet

I
(SIFCHx)
P6.x/SIFCH.x
SIFCOM
V
OL(SIFCHx)
V
OH(SIFCHx)
Damping
Transistor
Excitation
Transistor
t
Ex(SIFCHx)
SIFEX(tsm)
P6.x/SIFCH.x
t
SIFCH(x)
MSP430FW429, MSP430FW428
MSP430FW427, MSP430FW425, MSP430FW423
SLAS383E –OCTOBER 2003–REVISED DECEMBER 2013 www.ti.com
Scan IF, Port Drive, Port Timing
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS V
CC
MIN TYP MAX UNIT
Voltage drop due to excitation
I(SIFCHx) = 2 mA,
V
OL(SIFCHx)
transistor's on-resistance (see 3 V 0.3 V
SIFTEN = 1
Figure 18)
Voltage drop due to damping
I
(SIFCHx)
= -200 µA,
V
OH(SIFCHx)
transistor’s on-resistance
(1)
(see 3 V 0.1 V
SIFTEN = 1
Figure 18)
I
(SIFCOM)
= 3 mA,
V
OL(SIFCOM)
2.2 V, 3 V 0 0.1 V
SIFSH = 1
V
(SIFCHx)
= 0 V to AV
CC
, port
I
SIFCHx(tri-state)
function disabled, 3 V -50 50 nA
SIFSH = 1
Change of pulse duration of
Δt
dSIFCH
: internal signal SIFEX(tsm) to I
(SIFCHx)
= 3 mA,
2.2 V, 3 V -20 20 ns
t
wEx(tsm)
- t
wSIFCH
pulse duration at pin SIFCHx t
Ex(SIFCHx)
= 500 ns ±20%
(see Figure 18)
(1) SIFCOM = 1.5V , supplied externally (see Figure 19)
Figure 18. P6.x/SIFCHx Timing, SIFCHx Function Selected
Figure 19. Voltage Drop Due to On-Resistance
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