Datasheet

MSP430F6438, MSP430F6436
MSP430F6435, MSP430F6433
www.ti.com SLAS720C –AUGUST 2010–REVISED AUGUST 2013
LDO-PWR (LDO Power System)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS V
CC
MIN TYP MAX UNIT
V
LAUNCH
LDO input detection threshold 3.75 V
V
LDOI
LDO input voltage Normal operation 3.76 5.5 V
V
LDO
LDO output voltage 3.3 ±9% V
LDOO terminal input voltage with LDO
V
LDO_EXT
LDO disabled 1.8 3.6 V
disabled
I
LDOO
Maximum external current from LDOO terminal LDO is on 20 mA
I
DET
LDO current overload detection
(1)
60 100 mA
C
LDOI
LDOI terminal recommended capacitance 4.7 µF
C
LDOO
LDOO terminal recommended capacitance 220 nF
Within 2%,
t
ENABLE
Settling time V
LDO
2 ms
recommended capacitances
(1) A current overload is detected when the total current supplied from the LDO exceeds this value.
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
DV
CC(PGM/ERASE)
Program and erase supply voltage 1.8 3.6 V
I
PGM
Average supply current from DVCC during program 3 5 mA
I
ERASE
Average supply current from DVCC during erase 6 11 mA
Average supply current from DVCC during mass erase or bank
I
MERASE
, I
BANK
6 11 mA
erase
t
CPT
Cumulative program time See
(1)
16 ms
Program and erase endurance 10
4
10
5
cycles
t
Retention
Data retention duration T
J
= 25°C 100 years
t
Word
Word or byte program time See
(2)
64 85 µs
t
Block, 0
Block program time for first byte or word See
(2)
49 65 µs
Block program time for each additional byte or word, except for last
t
Block, 1–(N–1)
See
(2)
37 49 µs
byte or word
t
Block, N
Block program time for last byte or word See
(2)
55 73 µs
Erase time for segment, mass erase, and bank erase when
t
Seg Erase
See
(2)
23 32 ms
available
MCLK frequency in marginal read mode
f
MCLK,MGR
0 1 MHz
(FCTL4.MGR0 = 1 or FCTL4.MGR1 = 1)
(1) The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming
methods: individual word or byte write and block write modes.
(2) These values are hardwired into the flash controller's state machine.
JTAG and Spy-Bi-Wire Interface
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
f
SBW
Spy-Bi-Wire input frequency 2.2 V, 3 V 0 20 MHz
t
SBW,Low
Spy-Bi-Wire low clock pulse duration 2.2 V, 3 V 0.025 15 µs
Spy-Bi-Wire enable time (TEST high to acceptance of first clock
t
SBW, En
2.2 V, 3 V 1 µs
edge)
(1)
t
SBW,Rst
Spy-Bi-Wire return to normal operation time 15 100 µs
(1) Tools that access the Spy-Bi-Wire interface must wait for the t
SBW,En
time after pulling the TEST/SBWTCK pin high before applying the
first SBWTCK clock edge.
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