Datasheet

Table Of Contents
MSP430F5529, MSP430F5528, MSP430F5527, MSP430F5526
MSP430F5525, MSP430F5524, MSP430F5522, MSP430F5521
MSP430F5519, MSP430F5517, MSP430F5515, MSP430F5514, MSP430F5513
www.ti.com
SLAS590L MARCH 2009REVISED MAY 2013
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
DV
CC(PGM,ERASE)
Program and erase supply voltage 1.8 3.6 V
I
PGM
Average supply current from DVCC during program
(1)
3 5 mA
I
ERASE
Average supply current from DVCC during erase
(1)
6 11 mA
Average supply current from DVCC during mass erase or bank
I
MERASE
, I
BANK
6 11 mA
erase
(1)
t
CPT
Cumulative program time See
(2)
16 ms
Program and erase endurance 10
4
10
5
cycles
t
Retention
Data retention duration T
J
= 25°C 100 years
t
Word
Word or byte program time See
(3)
64 85 µs
t
Block, 0
Block program time for first byte or word See
(3)
49 65 µs
Block program time for each additional byte or word, except for last
t
Block, 1–(N–1)
See
(3)
37 49 µs
byte or word
t
Block, N
Block program time for last byte or word See
(3)
55 73 µs
Erase time for segment, mass erase, and bank erase when
t
Erase
See
(3)
23 32 ms
available.
MCLK frequency in marginal read mode
f
MCLK,MGR
0 1 MHz
(FCTL4.MGR0 = 1 or FCTL4. MGR1 = 1)
(1) Default clock system frequency of MCLK = 1 MHz, ACLK = 32768 Hz, SMCLK = 1 MHz. No peripherals are enabled or active.
(2) The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming
methods: individual word- or byte-write and block-write modes.
(3) These values are hardwired into the flash controller's state machine.
JTAG and Spy-Bi-Wire Interface
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
f
SBW
Spy-Bi-Wire input frequency 2.2 V, 3 V 0 20 MHz
t
SBW,Low
Spy-Bi-Wire low clock pulse duration 2.2 V, 3 V 0.025 15 µs
Spy-Bi-Wire enable time (TEST high to acceptance of first clock
t
SBW, En
2.2 V, 3 V 1 µs
edge)
(1)
t
SBW,Rst
Spy-Bi-Wire return to normal operation time 15 100 µs
2.2 V 0 5 MHz
f
TCK
TCK input frequency, 4-wire JTAG
(2)
3 V 0 10 MHz
R
internal
Internal pulldown resistance on TEST 2.2 V, 3 V 45 60 80 kΩ
(1) Tools accessing the Spy-Bi-Wire interface need to wait for the t
SBW,En
time after pulling the TEST/SBWTCK pin high before applying the
first SBWTCK clock edge.
(2) f
TCK
may be restricted to meet the timing requirements of the module selected.
Copyright © 2009–2013, Texas Instruments Incorporated Submit Documentation Feedback 79
Product Folder Links: MSP430F5529 MSP430F5528 MSP430F5527 MSP430F5526 MSP430F5525 MSP430F5524
MSP430F5522 MSP430F5521 MSP430F5519 MSP430F5517 MSP430F5515 MSP430F5514 MSP430F5513