Datasheet

MSP430F5310, MSP430F5309
MSP430F5308, MSP430F5304
www.ti.com SLAS677E –SEPTEMBER 2010–REVISED NOVEMBER 2013
LDO-PWR (LDO Power System)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS V
CC
MIN TYP MAX UNIT
V
LAUNCH
LDO input detection threshold 3.75 V
V
LDOI
LDO input voltage 3.76 5.5 V
V
LDO
LDO output voltage 3.3 ±9% V
LDOO terminal input voltage with
V
LDO_EXT
LDO disabled 1.8 3.6 V
LDO disabled
Maximum external current from
I
LDOO
LDO is on 20 mA
LDOO terminal
LDO current overload detection
I
DET
60 100 mA
(1)
LDOI terminal recommended
C
LDOI
4.7 µF
capacitance
LDOO terminal recommended
C
LDOO
220 nF
capacitance
Within 2%, recommended
t
ENABLE
Settling time V
LDO
2 ms
capacitances
(1) A current overload will be detected when the total current supplied from the LDO exceeds this value.
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
DV
CC(PGM/ERASE)
Program or erase supply voltage 1.8 3.6 V
t
READMARGIN
Read access time during margin mode 200 ns
I
PGM
Supply current from DVCC during program 3 5 mA
I
ERASE
Supply current from DVCC during erase 2 6.5 mA
I
MERASE
, I
BANK
Supply current from DVCC during mass erase or bank erase 2 6.5 mA
t
CPT
Cumulative program time See
(1)
16 ms
Program and erase endurance 10
4
10
5
cycles
t
Retention
Data retention duration T
J
= 25°C 100 years
t
Word
Word or byte program time See
(2)
64 85 µs
t
Block, 0
Block program time for first byte or word See
(2)
49 65 µs
Block program time for each additional byte or word, except for last
t
Block, 1–(N–1)
See
(2)
37 49 µs
byte or word
t
Block, N
Block program time for last byte or word See
(2)
55 73 µs
Erase time for segment, mass erase, and bank erase when
t
Erase
See
(2)
23 32 ms
available.
(1) The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming
methods: individual word or byte write and block write modes.
(2) These values are hardwired into the flash controller's state machine.
Copyright © 2010–2013, Texas Instruments Incorporated Submit Documentation Feedback 69
Product Folder Links: MSP430F5310 MSP430F5309 MSP430F5308 MSP430F5304