Datasheet

BUSY
WAIT
Generate
Programming Operation Active
t
Block, 0
= 25/f
FTG
t
Block, 1-63
= 18/f
FTG
Write to flash e.g., MOV#123h, &Flash
BLKWRT bit
t
Block, 1-63
= 18/f
FTG
t
end
= 6/f
FTG
Cumulative Programming Time t
CPT
∼=< 4ms, V
CC
Current Consumption is Increased
Programming Voltage
Remove
Programming Voltage
Flash Memory Operation www.ti.com
7.3.3.4 Block Write
The block write can be used to accelerate the flash write process when many sequential bytes or words
need to be programmed. The flash programming voltage remains on for the duration of writing the 64-byte
block. The cumulative programming time t
CPT
must not be exceeded for any block during a block write.
A block write cannot be initiated from within flash memory. The block write must be initiated from RAM
only. The BUSY bit remains set throughout the duration of the block write. The WAIT bit must be checked
between writing each byte or word in the block. When WAIT is set the next byte or word of the block can
be written. When writing successive blocks, the BLKWRT bit must be cleared after the current block is
complete. BLKWRT can be set initiating the next block write after the required flash recovery time given by
t
end
. BUSY is cleared following each block write completion indicating the next block can be written.
Figure 7-10 shows the block write timing.
Figure 7-10. Block-Write Cycle Timing
318
Flash Memory Controller SLAU144J–December 2004–Revised July 2013
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