Datasheet

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SBAS203J − MARCH 2002 − REVISED JANUARY 2008
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7
DIGITAL CHARACTERISTICS: DV
DD
= 2.7V to 5.25V
All specifications from T
MIN
to T
MAX
, f
OSC
= 1MHz, unless otherwise specified.
MSC1210Yx
PARAMETER CONDITIONS
MIN TYP MAX
UNITS
DIGITAL POWER-SUPPLY REQUIREMENTS
Digital Power-Supply Voltage DV
DD
2.7 3.0 3.6 V
Normal Mode, f
OSC
= 1MHz 1.4 1.6 mA
Normal Mode, f
OSC
= 8MHz 8 9 mA
Stop Mode
(1)
0.5 µA
Digital Power-Supply Current
DV
DD
4.75 5.0 5.25 V
Digital Power-Supply Current
Normal Mode, f
OSC
= 1MHz 2 2.2 mA
Normal Mode, f
OSC
= 8MHz 17 18 mA
Stop Mode
(1)
0.5 µA
DIGITAL INPUT/OUTPUT (CMOS)
Logic Level
V
IH
(except XIN pin) 0.6 • DV
DD
DV
DD
V
Logic Level
V
IL
(except XIN pin) DGND 0.2 • DV
DD
V
I/O Pin Hysteresis 700 mV
Ports 0−3, Input Leakage Current, Input Mode V
IH
= DV
D
D
or V
IH
= 0V < 1 pA
Pins EA, XIN Input Leakage Current < 1 pA
V
OL
, ALE, PSEN, Ports 0−3, All Output Modes
I
OL
= 1mA DGND 0.4 V
V
OL
, ALE, PSEN, Ports 0−3, All Output Modes
I
OL
= 30mA 1.5 V
V
OH
, ALE, PSEN, Ports 0−3, Strong Drive Output
I
OH
= 1mA DV
DD
− 0.4 DV
DD
− 0.1 DV
DD
V
V
OH
, ALE, PSEN, Ports 0−3, Strong Drive Output
I
OH
= 30mA DV
DD
− 1.5 V
Ports 0−3, Pull-Up Resistors 9 kΩ
Pins ALE, PSEN, Pull-Up Resistors Flash Programming Mode Only 9 kΩ
Pin RST, Pull-Down Resistor 500 kΩ
(1)
Digital Brownout Detect disabled (HCR1.2 = 1), Low Voltage Detect disabled (LVDCON.3 =1). Ports configured for CMOS output low. If in External Oscillation mode, the
oscillator must be disabled.
FLASH MEMORY CHARACTERISTICS: DV
DD
= 2.7V to 5.25V
MSC1210Yx
PARAMETER CONDITIONS
MIN TYP MAX
UNITS
Flash Memory Endurance 100,000 1,000,000 cycles
Flash Memory Data Retention 100 years
Mass and Page Erase Time Set with FER in FTCON 10 ms
Flash Memory Write Time Set with FWR in FTCON 30 40 µs
Flash Programming Current
DV
DD
= 3.0V 10 mA
Flash Programming Current
DV
DD
= 5.0V 25 mA