Datasheet

 
 
SLVS011D − OCTOBER 1982 − REVISED AUGUST 2003
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified virtual junction temperature, V
I
= −10 V, I
O
= 40 mA (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
†
T
J
MC79L05C MC79L05AC
UNIT
PARAMETER
TEST CONDITIONS
†
T
J
MIN TYP MAX MIN TYP MAX
UNIT
‡
25°C −4.6 −5 −5.4 −4.8 −5 −5.2
Output voltage
‡
V
I
= −7 V to −20 V,
I
O
= 1 mA to 40 mA
0°C to 125°C −4.5 −5.5 −4.75 −5.25
V
V
I
= −10 V, I
O
= 1 mA to 70 mA 0°C to 125°C −4.5 −5.5 −4.75 −5.25
Input regulation
V
I
= −7 V to −20 V
25°C
200 150
mV
Input regulation
V
I
= −8 V to −20 V
25
°
C
150 100
mV
Ripple rejection V
I
= −8 V to −18 V, f = 120 Hz 25°C 40 49 41 49 dB
Output regulation
I
O
= 1 mA to 100 mA
25°C
60 60
mV
Output regulation
I
O
= 1 mA to 40 mA
25
°
C
30 30
mV
Output noise voltage f = 10 Hz to 100 kHz 25°C 40 40 µV
Dropout voltage I
O
= 40 mA 25°C 1.7 1.7 V
Bias current
25°C 6 6
mA
Bias current
125°C 5.5 5.5
mA
Bias current change
V
I
= −8 V to −20 V
0°C to 125°C
1.5 1.5
mA
Bias current change
I
O
= 1 mA to 40 mA
0
°
C to 125
°
C
0.2 0.1
mA
†
All characteristics are measured with a 0.33-µF capacitor across the input and a 0.1-µF capacitor across the output. Pulse-testing techniques are
used to maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be taken into account separately.
‡
This specification applies only for dc power dissipation permitted by absolute maximum ratings.
electrical characteristics at specified virtual junction temperature, V
I
= −19 V, I
O
= 40 mA (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
†
T
J
MC79L12C MC79L12AC
UNIT
PARAMETER
TEST CONDITIONS
†
T
J
MIN TYP MAX MIN TYP MAX
UNIT
‡
25°C −11.1 −12 −12.9 −11.5 −12 −12.5
Output voltage
‡
V
I
= −14.5 V to −27 V,
I
O
= 1 mA to 40 mA
0°C to 125°C −10.8 −13.2 −11.4 −12.6
V
V
I
= −19 V, I
O
= 1 mA to 70 mA 0°C to 125°C −10.8 −13.2 −11.4 −12.6
Input regulation
V
I
= −14.5 V to −27 V
25°C
250 250
mV
Input regulation
V
I
= −16 V to −27 V
25
°
C
200 200
mV
Ripple rejection V
I
= −15 V to −25 V, f = 120 Hz 25°C 36 42 37 42 dB
Output regulation
I
O
= 1 mA to 100 mA
25°C
100 100
mV
Output regulation
I
O
= 1 mA to 40 mA
25
°
C
50 50
mV
Output noise voltage f = 10 Hz to 100 kHz 25°C 80 80 µV
Dropout voltage I
O
= 40 mA 25°C 1.7 1.7 V
Bias current
25°C 6.5 6.5
mA
Bias current
125°C 6 6
mA
Bias current change
V
I
= −16 V to −27 V
0°C to 125°C
1.5 1.5
mA
Bias current change
I
O
= 1 mA to 40 mA
0
°
C to 125
°
C
0.2 0.1
mA
†
All characteristics are measured with a 0.33-µF capacitor across the input and a 0.1-µF capacitor across the output. Pulse-testing techniques are
used to maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be taken into account separately.
‡
This specification applies only for dc power dissipation permitted by absolute maximum ratings.