Datasheet


 W   
SLLS639JANUARY 2005
www.ti.com
8
PIN DESCRIPTION
PIN
NUMBER
NAME DESCRIPTION
1 COM Common
2 NO Normally open
3 GND Digital ground
4 IN Digital control pin to connect COM to NO
5 V
+
Power supply
PARAMETER DESCRIPTION
SYMBOL DESCRIPTION
V
COM
Voltage at COM
V
NO
Voltage at NO
r
on
Resistance between COM and NO ports when the channel is ON
r
on(flat)
Difference between the maximum and minimum value of r
on
in a channel over the specified range of conditions
I
NO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
I
NO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM)
open
I
COM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state
I
COM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output (NO)
open
V
IH
Minimum input voltage for logic high for the control input (IN)
V
IL
Maximum input voltage for logic low for the control input (IN)
V
I
Voltage at the control input (IN)
I
IH
, I
IL
Leakage current measured at the control input (IN)
t
ON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay
between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
t
OFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay
between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
Q
C
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM) output.
This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, Q
C
= C
L
× V
COM
, C
L
is the load capacitance, and V
COM
is the change in analog output voltage.
C
NO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
C
NO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
C
COM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
C
COM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
C
I
Capacitance of control input (IN)
O
ISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency,
with the corresponding channel (NO to COM) in the OFF state.
BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is −3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean
square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic.
I
+
Static power-supply current with the control (IN) pin at V
+
or GND