Datasheet

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
SLLS348M − JUNE 1999 − REVISED MARCH 2004
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4 and Figure 6)
PARAMETER TEST CONDITIONS MIN TYP
†
MAX UNIT
I
I
Input leakage
current
FORCEOFF,
FORCEON, EN
±0.01 ±1 µA
Auto-powerdown
disabled
V
CC
= 3.3 V or 5 V,
No load,
FORCEOFF
and
FORCEON at V
CC
0.3 1 mA
I
CC
Supply current
Powered off
V
CC
= 3.3 V or 5 V,
T
A
= 25
°
C
No load, FORCEOFF at GND 1 10
I
CC
Supply current
Auto-powerdown
enabled
T
A
= 25°C
No load, FORCEOFF at V
CC
,
FORCEON at GND,
All RIN are open or grounded
1 10
µA
†
All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25°C.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at V
CC
= 5 V ± 0.5 V.
DRIVER SECTION
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4 and Figure 6)
PARAMETER TEST CONDITIONS MIN TYP
†
MAX UNIT
V
OH
High-level output voltage
DOUT at R
L
= 3 kΩ to
GND,
DIN = GND 5 5.4 V
V
OL
Low-level output voltage
DOUT at R
L
= 3 kΩ to
GND,
DIN = V
CC
−5 −5.4 V
I
IH
High-level input current V
I
= V
CC
±0.01 ±1 µA
I
IL
Low-level input current V
I
at GND ±0.01 ±1 µA
I
OS
Short-circuit output current
‡
V
CC
= 3.6 V, V
O
= 0 V ±35 ±60
mA
I
OS
Short-circuit output current
‡
V
CC
= 5.5 V, V
O
= 0 V ±35 ±60
mA
r
o
Output resistance V
CC
, V+, and V− = 0 V, V
O
= ±2 V 300 10M Ω
I
off
Output leakage current
FORCEOFF = GND
V
O
= ±12 V, V
CC
= 3 V to 3.6 V ±25
µA
I
off
Output leakage current
FORCEOFF = GND
V
O
= ±10 V, V
CC
= 4.5 V to 5.5 V ±25
µ
A
†
All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25°C.
‡
Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output
should be shorted at a time.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at V
CC
= 5 V ± 0.5 V.
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4 and Figure 6)
PARAMETER TEST CONDITIONS MIN TYP
†
MAX UNIT
Maximum data rate C
L
= 1000 pF, R
L
= 3 kΩ, See Figure 1 150 250 kbit/s
t
sk(p)
Pulse skew
§
C
L
= 150 pF to 2500 pF, R
L
= 3 kΩ to 7 kΩ, See Figure 2 100 ns
SR(tr)
Slew rate, transition region
V
CC
= 3.3 V
,
C
L
= 150 pF to 1000 pF 6 30
V/µs
SR(tr)
Slew rate, transition region
(see Figure 1)
V
CC
= 3.3 V
,
R
L
= 3 kΩ to 7 kΩ
C
L
= 150 pF to 2500 pF 4 30
V/
µ
s
†
All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25°C.
§
Pulse skew is defined as |t
PLH
− t
PHL
| of each channel of the same device.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at V
CC
= 5 V ± 0.5 V.