Datasheet
Table Of Contents
- FEATURES
- APPLICATIONS
- DESCRIPTION/ORDERING INFORMATION
- Absolute Maximum Ratings
- Recommended Operating Conditions
- Electrical Characteristics
- Driver Section Electrical Characteristics
- Driver Section Switching Characteristics
- Receiver Section Electrical Characteristics
- Receiver Section Switching Characteristics
- ESD Protection
- Auto-Powerdown Section Electrical Characteristics
- Auto-Powerdown Section Switching Characteristics
- PARAMETER MEASUREMENT INFORMATION
- PARAMETER MEASUREMENT INFORMATION
- PARAMETER MEASUREMENT INFORMATION
- APPLICATION INFORMATION

www.ti.com
Electrical Characteristics
(1)
Driver Section Electrical Characteristics
(1)
Driver Section Switching Characteristics
(1)
MAX3221E
3-V TO 5.5-V SINGLE-CHANNEL RS-232 LINE DRIVER/RECEIVER
WITH 15-kV IEC ESD PROTECTION
SLLS686A – OCTOBER 2005 – REVISED MAY 2006
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 6 )
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
FORCEOFF,
I
I
Input leakage current ± 0.01 ± 1 µ A
FORCEON, EN
No load,
Auto-powerdown
FORCEOFF and 0.3 1 mA
disabled
FORCEON at V
CC
V
CC
= 3.3 V or 5 V, No load,
I
CC
Supply current Powered off 1 10
T
A
= 25 ° C FORCEOFF at GND
µ A
No load, FORCEOFF at V
CC
,
Auto-powerdown
FORCEON at GND, 1 10
enabled
All RIN are open or grounded
(1) Test conditions are C1–C4 = 0.1 µ F at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 µ F, C2–C4 = 0.33 µ F at V
CC
= 5 V ± 0.5 V.
(2) All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25 ° C.
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 6 )
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
V
OH
High-level output voltage DOUT at R
L
= 3 k Ω to GND, DIN = GND 5 5.4 V
V
OL
Low-level output voltage DOUT at R
L
= 3 k Ω to GND, DIN = V
CC
–5 –5.4 V
I
IH
High-level input current V
I
= V
CC
± 0.01 ± 1 µ A
I
IL
Low-level input current V
I
= GND ± 0.01 ± 1 µ A
V
CC
= 3.6 V, V
O
= 0 V ± 35 ± 60
Short-circuit
I
OS
mA
output current
(3)
V
CC
= 5.5 V, V
O
= 0 V ± 35 ± 60
r
o
Output resistance V
CC
, V+, and V– = 0 V, V
O
= ± 2 V 300 10M Ω
V
O
= ± 12 V, V
CC
= 3 V to 3.6 V ± 25
I
off
Output leakage current FORCEOFF = GND µ A
V
O
= ± 10 V, V
CC
= 4.5 V to 5.5 V ± 25
(1) Test conditions are C1–C4 = 0.1 µ F at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 µ F, C2–C4 = 0.33 µ F at V
CC
= 5 V ± 0.5 V.
(2) All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25 ° C.
(3) Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one
output should be shorted at a time.
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 6 )
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
Maximum data rate C
L
= 1000 pF, R
L
= 3 k Ω , See Figure 1 150 250 kbit/s
t
sk(p)
Pulse skew
(3)
C
L
= 150 pF to 2500 pF, R
L
= 3 k Ω to 7 k Ω , See Figure 2 100 ns
Slew rate, C
L
= 150 pF to 1000 pF 6 30
V
CC
= 3.3 V,
SR(tr) transition region V/ µ s
R
L
= 3 k Ω to 7 k Ω
C
L
= 150 pF to 2500 pF 4 30
(see Figure 1 )
(1) Test conditions are C1–C4 = 0.1 µ F at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 µ F, C2–C4 = 0.33 µ F at V
CC
= 5 V ± 0.5 V.
(2) All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25 ° C.
(3) Pulse skew is defined as |t
PLH
– t
PHL
| of each channel of the same device.
4
Submit Documentation Feedback