Datasheet
Table Of Contents
- Features
- Applications
- Description
- Absolute Maximum Ratings
- Recommended Operating Conditions
- Electrical Characteristics
- Driver Section
- Electrical Characteristics
- Switching Characteristics
- ESD Protection
- Receiver Section
- Electrical Characteristics
- Switching Characteristics
- ESD Protection
- Auto-Powerdown Section
- Electrical Characteristics
- Switching Characteristics
- Parameter Measurement Information
- Application Information
- Revision History

MAX3221
SLLS348N –JUNE 1999–REVISED JANUARY 2014
www.ti.com
Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
(1)
(see Figure 6)
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
FORCEOFF, FORCEON,
I
I
Input leakage current ±0.01 ±1 µA
EN
Auto-powerdown No load, FORCEOFF and
0.3 1 mA
disabled FORCEON at V
CC
Powered off No load, FORCEOFF at GND 1 10
I
CC
Supply current No load, V
CC
= 3.3 V to 5 V
No load, FORCEOFF at V
CC
,
µA
Auto-powerdown enabled FORCEON at GND, 1 10
All RIN are open or grounded
(1) Test conditions are C1−C4 = 0.1 μF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at V
CC
= 5 V ± 0.5 V.
(2) All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25°C.
Driver Section
Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
(1)
(see Figure 6)
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
V
OH
High-level output voltage D
OUT
at R
L
= 3 kΩ to GND, D
IN
= GND 5 5.4 V
V
OL
Low-level output voltage D
OUT
at R
L
= 3 kΩ to GND, D
IN
= V
CC
–5 –5.4 V
I
IH
High-level input current V
I
= V
CC
±0.01 ±1 μA
I
IL
Low-level input current V
I
at GND ±0.01 ±1 μA
V
CC
= 3.6 V V
O
= 0 V ±35 ±60
I
OS
Short-circuit output current
(3)
mA
V
CC
= 5.5 V V
O
= 0 V ±35 ±60
r
O
Output resistance V
CC
, V+, and V– = 0 V V
O
= ± 2 V 300 10M Ω
V
O
= ± 12 V,
±25
V
CC
= 3 V to 3.6 V
I
off
Output leakage current FORCEOFF = GND µA
V
O
= ± 12 V,
±25
V
CC
= 4.5 V to 5.5V
(1) Test conditions are C1−C4 = 0.1 μF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at V
CC
= 5 V ± 0.5
(2) All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25°C.
(3) Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one
output should be shorted at a time.
Switching Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
(1)
(see Figure 6)
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
C
L
= 1000 pF, R
L
= 3 kΩ,
Maximum data rate 150 250 kbit/s
See Figure 1
C
L
= 150 to 2500 pF, R
L
= 3 kΩ to 7 kΩ,
t
sk(p)
Pulse skew
(3)
100 ns
See Figure 2
C
L
= 150 to 1000 pF 6 30
Slew rate, transition region V
CC
= 3.3 V,
SR(tr) V/μs
(see Figure 1) R
L
= 3 kΩ to 7 kΩ
C
L
= 150 to 2500 pF 4 30
(1) Test conditions are C1−C4 = 0.1 μF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at V
CC
= 5 V ± 0.5 V.
(2) All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25°C.
(3) Pulse skew is defined as |t
PLH
− t
PHL
| of each channel of the same device.
ESD Protection
TERMINAL
TEST CONDITIONS TYP UNIT
NAME NO
DOUT 13 HBM ±15 kV
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