Datasheet

LP38856
SNVS336E –JUNE 2006–REVISED APRIL 2013 www.ti.com
Electrical Characteristics (continued)
Unless otherwise specified: V
IN
= V
OUT(NOM)
+ 1V, V
BIAS
= 3.0V, I
OUT
= 10 mA, C
IN
= C
OUT
= 10 µF, C
BIAS
= 1µF, V
EN
= V
BIAS
.
Limits in standard type are for T
J
= 25°C only; limits in boldface type apply over the junction temperature (T
J
) range of -40°C
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at T
J
= 25°C, and are provided for reference purposes only.
Symbol Parameter Conditions MIN TYP MAX Units
V
EN
falling from V
EN(ON)
until 50 150
V
EN(HYS)
Enable Voltage Hysteresis 100 mV
Output = OFF 30 200
t
OFF
Turn-OFF Delay Time R
LOAD
× C
OUT
<< t
OFF
- 20 -
µs
t
ON
Turn-ON Delay Time R
LOAD
× C
OUT
<< t
ON
- 15 -
AC Parameters
V
IN
= V
OUT
+1V,
- 80 -
f = 120 Hz
PSRR Ripple Rejection for V
IN
Input
dB
(V
IN
) Voltage
V
IN
= V
OUT
+ 1V,
- 65 -
f = 1 kHz
V
BIAS
= V
OUT
+ 3V,
- 58 -
f = 120 Hz
PSRR
Ripple Rejection for V
BIAS
Voltage dB
(V
BIAS
)
V
BIAS
= V
OUT
+ 3V,
- 58 -
f = 1 kHz
Output Noise Density f = 120 Hz - 1 - µV/√Hz
e
n
BW = 10 Hz − 100 kHz - 150 -
Output Noise Voltage µV (rms)
BW = 300 Hz − 300 kHz - 90 -
Thermal Parameters
T
SD
Thermal Shutdown Junction
- 160 -
Temperature
°C
T
SD(HYS)
Thermal Shutdown Hysteresis - 10 -
TO-220-5 - 60 -
Thermal Resistance, Junction to
θ
JA
Ambient
(4)
DDPAK/TO-263-5 - 60 -
°C/W
TO-220-5 - 3 -
Thermal Resistance, Junction to
θ
JC
Case
(4)
DDPAK/TO-263-5 - 3 -
(4) Device power dissipation must be de-rated based on device power dissipation (T
D
), ambient temperature (T
A
), and package junction to
ambient thermal resistance (θ
JA
). Additional heat-sinking may be required to ensure that the device junction temperature (T
J
) does not
exceed the maximum operating rating. See the Application Information section for details.
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