Datasheet

LP38851
www.ti.com SNVS492C –JUNE 2007–REVISED APRIL 2013
ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified: V
OUT
= 0.80V, V
IN
= V
OUT(NOM)
+ 1V, V
BIAS
= 3.0V, V
EN
= V
BIAS
, I
OUT
= 10 mA, C
IN
= C
OUT
= 10 µF,
C
BIAS
= 1 µF, C
SS
= open. Limits in standard type are for T
J
= 25°C only; limits in boldface type apply over the junction
temperature (T
J
) range of -40°C to +125°C. Minimum and Maximum limits are specified through test, design, or statistical
correlation. Typical values represent the most likely parametric norm at T
J
= 25°C, and are provided for reference purposes
only.
Symbol Parameter Conditions Min Typ Max Units
V
IN
= V
OUT(NOM)
+ 1V,
- 72 -
f = 120 Hz
PSRR Ripple Rejection for V
IN
Input
(V
IN
) Voltage
V
IN
= V
OUT(NOM)
+ 1V,
- 61 -
f = 1 kHz
dB
V
BIAS
= V
OUT(NOM)
+ 3V,
- 54 -
f = 120 Hz
PSRR
Ripple Rejection for V
BIAS
Voltage
(V
BIAS
)
V
BIAS
= V
OUT(NOM)
+ 3V,
- 53 -
f = 1 kHz
Output Noise Density f = 120 Hz - 1 - µV/√Hz
e
n
BW = 10 Hz − 100 kHz - 150 -
Output Noise Voltage µV
RMS
BW = 300 Hz − 300 kHz - 90 -
Thermal Parameters
Thermal Shutdown Junction
T
SD
- 160 -
Temperature
°C
T
SD(HYS)
Thermal Shutdown Hysteresis - 10 -
SFM - 60 -
Thermal Resistance, Junction to
θ
J-A
PFM - 60 -
Ambient
(5)
SO PowerPad - 168 -
°C/W
SFM - 3 -
Thermal Resistance, Junction to
θ
J-C
PFM - 3 -
Case
(5)(6)
SO PowerPad - 11 -
(5) Device power dissipation must be de-rated based on device power dissipation (P
D
), ambient temperature (T
A
), and package junction to
ambient thermal resistance (θ
JA
). Additional heat-sinking may be required to ensure that the device junction temperature (T
J
) does not
exceed the maximum operating rating. See APPLICATION INFORMATION for details.
(6) For SFM and PFM: θ
J-C
refers to the BOTTOM surface of the package, under the epoxy body, as the 'CASE'. For SO PowerPad: θ
J-C
refers to the DAP (aka: Exposed Pad) on BOTTOM surface of the package as the 'CASE'.
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