Datasheet

using: The value of θ
J−A
for the SOIC-8 (D) package is 160°C/W, and the VSSOP-8 (DGK) package is 200°C/W.
LP2987, LP2988
www.ti.com SNVS004J –MARCH 1999–REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)(2)
Storage Temperature Range −65°C to +150°C
Operating Junction
Temperature Range −40°C to +125°C
Lead Temperature
(Soldering, 5 seconds) 260°C
ESD Rating
(3)
2 kV
Power Dissipation
(4)
Internally Limited
Input Supply Voltage
(Survival) −0.3V to +16V
Input Supply Voltage
(Operating) 2.1V to +16V
Shutdown Pin −0.3V to +16V
Sense Pin −0.3V to +6V
Output Voltage
(Survival)
(5)
−0.3V to +16V
I
OUT
(Survival) Short Circuit Protected
Input-Output Voltage
(Survival)
(6)
−0.3V to +16V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply
when operating the device outside of its rated operating conditions.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) The ESD rating of the Bypass pin is 500V (LP2988 only). The ESD rating of the V
IN
pin is 1kV and the Delay pin is ESD rated at 1.5kV.
(4) The maximum allowable power dissipation is a function of the maximum junction temperature, T
J
(MAX), the junction-to-ambient thermal
resistance, θ
J−A
, and the ambient temperature, T
A
. The maximum allowable power dissipation at any ambient temperature is calculated
The value θ
J−A
for the WSON (NGN) package is specifically dependent on PCB trace area, trace material, and the number of layers and
thermal vias. For improved thermal resistance and power dissipation for the WSON package, refer to Application Note AN-1187
(literature number SNOA401). Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the
regulator will go into thermal shutdown.
(5) If used in a dual-supply system where the regulator load is returned to a negative supply, the LM2987/8 output must be diode-clamped
to ground.
(6) The output PNP structure contains a diode between the V
IN
and V
OUT
terminals that is normally reverse-biased. Forcing the output
above the input will turn on this diode and may induce a latch-up mode which can damage the part (see APPLICATION HINTS).
ELECTRICAL CHARACTERISTICS
Limits in standard typeface are for T
J
= 25°C, and limits in boldface type apply over the full operating temperature range.
Unless otherwise specified: V
IN
= V
O
(NOM) + 1V, I
L
= 1 mA, C
OUT
= 4.7 µF, C
IN
= 2.2 µF, V
S/D
= 2V.
LM2987/8AI-X.X
(1)
LM2987/8I-X.X
(1)
Symbol Parameter Conditions Typical Units
Min Max Min Max
ΔV
O
Output Voltage Tolerance −0.5 0.5 −1.0 1.0
0.1 mA < I
L
< 200 mA −0.8 0.8 −1.6 1.6 %V
NOM
−1.8 1.8 −2.8 2.8
ΔV
O
/ΔV
IN
Output Voltage Line V
O
(NOM) + 1V ≤ V
IN
≤ 16V 0.014 0.014
0.007 %/V
Regulation
0.032 0.032
(1) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation using
Statistical Quality Control (SQC) methods. The limits are used to calculate TI's Average Outgoing Quality Level (AOQL).
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