Datasheet
LMZ22008
SNVS712G –FEBRUARY 2010–REVISED OCTOBER 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
VIN to PGND -0.3V to 24V
EN, SYNC to AGND -0.3V to 5.5V
SS, FB, SH to AGND -0.3V to 2.5V
AGND to PGND -0.3V to 0.3V
Junction Temperature 150°C
Storage Temperature Range -65°C to 150°C
ESD Susceptibility
(3)
± 2 kV
Peak Reflow Case Temperature 245°C
(30 sec)
For soldering specifications, refer to the following document: www.ti.com/lit/snoa549c
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) The human body model is a 100pF capacitor discharged through a 1.5 kΩ resistor into each pin. Test method is per JESD-22-114.
Operating Ratings
(1)
VIN 6V to 20V
EN, SYNC 0V to 5.0V
Operation Junction Temperature −40°C to 125°C
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics.
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