Datasheet
Exposed Pad
Connect to GND
5
SS
6
FB
3
EN
1
VIN
2
RON
4
GND
7
VOUT
V
IN
C
IN
VIN
R
ON
R
FBT
C
FF
C
SS
R
FBB
C
OUT
LMZ14202H
VOUT
FB
RON
SS
VIN
EN
GND
V
OUT
10 PF
4700 pF
0.022 PF
* R
ENT
* R
ENB
* See equation 1
to calculate values
V
OUT
R
FBT
R
FBB
R
ON
C
OUT
C
OUT-ESR
V
IN
12V 34 k: 2.43 k: 249 k: 47 PF 1-75 m: 15 - 42V
15V 34 k: 1.91 k: 287 k: 47 PF 1-65 m: 18 - 42V
18V 34 k: 1.58 k: 374 k: 33 PF 1-60 m: 22 - 42V
24V 34 k: 1.18 k: 499 k: 33 PF 1-60 m: 28 - 42V
30V 34 k: 931: 619 k: 33 PF 1-75 m: 34 - 42V
5V 34 k: 6.49 k: 100 k: 100 PF 1-145 m: 8 - 42V
LMZ14202H
www.ti.com
SNVS691E –JANUARY 2011–REVISED OCTOBER 2013
Simplified Application Schematic
Connection Diagram
Figure 2. Top View
7-Lead PFM
PIN DESCRIPTIONS
Pin Name Description
1 VIN Supply input — Additional external input capacitance is required between this pin and the exposed pad (EP).
2 RON On time resistor — An external resistor from V
IN
to this pin sets the on-time and frequency of the application. Typical
values range from 100k to 700k ohms.
3 EN Enable — Input to the precision enable comparator. Rising threshold is 1.18V.
4 GND Ground — Reference point for all stated voltages. Must be externally connected to EP.
5 SS Soft-Start — An internal 8 µA current source charges an external capacitor to produce the soft-start function.
6 FB Feedback — Internally connected to the regulation, over-voltage, and short-circuit comparators. The regulation reference
point is 0.8V at this input pin. Connect the feedback resistor divider between the output and ground to set the output
voltage.
7 VOUT Output Voltage — Output from the internal inductor. Connect the output capacitor between this pin and the EP.
EP EP Exposed Pad — Internally connected to pin 4. Used to dissipate heat from the package during operation. Must be
electrically connected to pin 4 external to the package.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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