Datasheet

LMZ12010

SNVS667G –FEBRUARY 2010–REVISED OCTOBER 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

VIN to PGND -0.3V to 24V

EN to AGND -0.3V to 5.5V

SS, FB to AGND -0.3V to 2.5V

AGND to PGND -0.3V to 0.3V

Junction Temperature 150°C

Storage Temperature Range -65°C to 150°C

ESD Susceptibility ± 2 kV

Peak Reflow Case Temperature 245°C

(30 sec)

For soldering specifications, refer to the following document: www.ti.com/lit/snoa549c

Operating Ratings

VIN 6V to 20V

EN 0V to 5.0V

Operation Junction Temperature −40°C to 125°C

Product Folder Links: LMZ12010