Datasheet

+
-
+
-
SENSOR
R
S
V
S
+
-
+
-
Active Band-Pass Filter
High Impedance Sensor Interface
CMOS Input Feature
High Side Current Sensing
Rail-to-Rail Input and Output Feature
V
IN
LOAD
+
-
R
S
LMV841, LMV842, LMV844
SNOSAT1G –OCTOBER 2006–REVISED FEBRUARY 2013 www.ti.com
Typical Applications
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
ESD Tolerance
(3)
Human Body Model 2 kV
Machine Model 200V
V
IN
Differential ±300 mV
Supply Voltage (V
+
– V
−
) 13.2V
Voltage at Input/Output Pins V
+
+0.3V, V
−
−0.3V
Input Current 10 mA
Storage Temperature Range −65°C to +150°C
Junction Temperature
(4)
+150°C
Soldering Information
Infrared or Convection (20 sec) 235°C
Wave Soldering Lead Temp. (10 sec) 260°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics Tables.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office / Distributors for
availability and specifications.
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(4) The maximum power dissipation is a function of T
J(MAX)
, θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient
temperature is P
D
= (T
J(MAX)
- T
A
) / θ
JA
. All numbers apply for packages soldered directly onto a PC board.
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Product Folder Links: LMV841 LMV842 LMV844